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IEEE Photonics Technology Letters

Spectral gain hole-burning at 1.53 mu m in erbium-doped fiber amplifiers

E. Desurvire, J.L. Zyskind, J.R. Simpson

Published Apr 1, 1990• 154 citations
Publisher

Abstract

Spectral gain hole-burning at lambda /sub 0/=1.53 mu m was observed in an erbium-doped fiber amplifier at temperatures between 4.2 and 77 K. The hole width was found to broaden with temperature for T>or=20 K according to a T/sup 1.73/ law. From the data, the room-temperature homogeneous linewidth associated with the 1.531- mu m transition in the /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ laser system was determined to be Delta lambda /sub h/=11.5 nm for aluminosilicate fibers.>

DOI
10.1109/68.53251

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Study of the complex atomic susceptibility of erbium-doped fiber amplifiers

E. Desurvire

A study of the complex atomic susceptibility of erbium-doped fiber amplifiers operating near the 1.53- mu m transition (/sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/) developed from a semiclassical theoretical description is presented. Expressions for the emission cross section sigma /sub e/( lambda ) and absorption cross section sigma /sub a/( lambda ) of erbium:glass as a quasi-three-level laser system with Stark-split sublevel manifolds are derived. The results are used to calculate the cross sections of aluminosilicate erbium-doped fibers at low temperatures (T=4.2, 77 K) and at room temperature. It is demonstrated that an expression for the gain coefficient of the fiber amplifier can be derived from the expression of the susceptibility. Using Kramers-Kronig relations, an expression for the refractive index change in the fiber is derived. The theoretical spectral gain profile of the fiber amplifier and concurrent refractive index changes are analyzed for different pumping regimes.>

Journal of Lightwave Technology•Jan 1, 1990•138 citations
Spectral gain hole-burning at lambda /sub 0/=1.53 mu m was observed in an erbium-doped fiber amplifier at temperatures between 4.2 and 77 K. The hole width was found to broaden with temperature for T>or=20 K according to a T/sup 1.73/ law. From the data, the room-temperature homogeneous linewidth associated with the 1.531- mu m transition in the /sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/ laser system was determined to be Delta lambda /sub h/=11.5 nm for aluminosilicate fibers.>
The gain saturation characteristics of erbium-doped fiber amplifiers, which are of importance for applications in optical fiber communications, will depend strongly on the relative importance of homogeneous and inhomogeneous saturation. We have recently reported low temperature spectral hole burning measurements in an erbium-doped fiber with an alumino-silicate core1. From these measurements the homogeneous linewidth was determined to be 11.5 nm. This is consistent with the homogeneous gain saturation observed for alumino-silicate fibers.2 For erbium-doped fibers with GeO2:SiO2 cores, on the other hand, inhomogeneous saturation effects have been reported.3
The homogeneous linewidth of the transition I15/24−I13/24 in highly doped erbium fibers and its dependence with temperature in the range from 10 to 50 K are experimentally characterized using spectral hole burning. The homogeneous linewidth dependence with temperature is quadratic above 20 K where homogeneous broadening is dominated by two-phonon Raman processes, and linear at lower temperatures where direct phonon processes occur. This characteristic power-law dependence was also derived from transmittance measurements. The solution of nonlinear field equations using the results obtained from our experiments predicts that Gaussian probe pulses propagate at subluminal speed through the narrow spectral holes burned in erbium-doped fibers. For gigahertz pulses in the telecommunication window, a fractional delay as high as 0.6 is predicted.
A study of the complex atomic susceptibility of erbium-doped fiber amplifiers operating near the 1.53- mu m transition (/sup 4/I/sub 13/2/-/sup 4/I/sub 15/2/) developed from a semiclassical theoretical description is presented. Expressions for the emission cross section sigma /sub e/( lambda ) and absorption cross section sigma /sub a/( lambda ) of erbium:glass as a quasi-three-level laser system with Stark-split sublevel manifolds are derived. The results are used to calculate the cross sections of aluminosilicate erbium-doped fibers at low temperatures (T=4.2, 77 K) and at room temperature. It is demonstrated that an expression for the gain coefficient of the fiber amplifier can be derived from the expression of the susceptibility. Using Kramers-Kronig relations, an expression for the refractive index change in the fiber is derived. The theoretical spectral gain profile of the fiber amplifier and concurrent refractive index changes are analyzed for different pumping regimes.>