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IEEE Photonics Technology Letters

Determination of homogeneous linewidth by spectral gain hole-burning in an erbium-doped fiber amplifier with GeO/sub 2/:SiO/sub 2/ core

J.L. Zyskind, E. Desurvire, James W. Sulhoff, D.J. Di Giovanni

Published Dec 1, 1990• 55 citations
Publisher

Abstract

Spectral gain hole-burning was observed at low temperatures in an erbium-doped fiber amplifier with GeO/sub 2/:SiO/sub 2/ core. At the peak wavelength lambda =1.535 mu m, homogeneous linewidths determined from the observed hole widths have a power-law dependence on temperature. At room temperature, the extrapolated homogeneous linewidth is 4 nm and the inhomogeneous linewidth is 8 nm.>

DOI
10.1109/68.62013

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Spectral Gain Hole-Burning in an Erbium-Doped Fiber Amplifier with GeO2:SiO2 Core

J.L. Zyskind, E. Desurvire, James W. Sulhoff +1 more

The gain saturation characteristics of erbium-doped fiber amplifiers, which are of importance for applications in optical fiber communications, will depend strongly on the relative importance of homogeneous and inhomogeneous saturation. We have recently reported low temperature spectral hole burning measurements in an erbium-doped fiber with an alumino-silicate core1. From these measurements the homogeneous linewidth was determined to be 11.5 nm. This is consistent with the homogeneous gain saturation observed for alumino-silicate fibers.2 For erbium-doped fibers with GeO2:SiO2 cores, on the other hand, inhomogeneous saturation effects have been reported.3

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Summary form only given. In this paper we report the first room temperature measurements of spectral hole-burning depths and widths of an Er-doped fiber amplifier (EDFA). The alumino-germano-silicate EDFA was pumped at 1480 nm and had a small signal gain of 25 dB at 1551 nm. Spectral gain measurements were carried out in the range 1535-1570 nm using a lock-in technique and spectral subtraction for accurate determination of SHB properties.

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Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental methods and a gain's model. Our experimental method allow us to measure the first homogeneous linewidth of the 1.5$\mu$m erbium emission with gain spectral hole burning consistently with the other measurement in the literature and the model explains the differences observed in literature between GSHB and other measurement methods.

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Determination of the homogeneous linewidth in 1.53-µm erbium doped fiber amplifiers by spectral gain hole burning

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Spectral hole burning in erbium-doped fibers for slow light

Sonia Melle, Óscar G. Calderón, M. A. Antón +2 more

The homogeneous linewidth of the transition I15/24−I13/24 in highly doped erbium fibers and its dependence with temperature in the range from 10 to 50 K are experimentally characterized using spectral hole burning. The homogeneous linewidth dependence with temperature is quadratic above 20 K where homogeneous broadening is dominated by two-phonon Raman processes, and linear at lower temperatures where direct phonon processes occur. This characteristic power-law dependence was also derived from transmittance measurements. The solution of nonlinear field equations using the results obtained from our experiments predicts that Gaussian probe pulses propagate at subluminal speed through the narrow spectral holes burned in erbium-doped fibers. For gigahertz pulses in the telecommunication window, a fractional delay as high as 0.6 is predicted.

Journal of the Optical Society of America B•Jul 30, 2012•6 citations
Spectral gain hole-burning was observed at low temperatures in an erbium-doped fiber amplifier with GeO/sub 2/:SiO/sub 2/ core. At the peak wavelength lambda =1.535 mu m, homogeneous linewidths determined from the observed hole widths have a power-law dependence on temperature. At room temperature, the extrapolated homogeneous linewidth is 4 nm and the inhomogeneous linewidth is 8 nm.>
The gain saturation characteristics of erbium-doped fiber amplifiers, which are of importance for applications in optical fiber communications, will depend strongly on the relative importance of homogeneous and inhomogeneous saturation. We have recently reported low temperature spectral hole burning measurements in an erbium-doped fiber with an alumino-silicate core1. From these measurements the homogeneous linewidth was determined to be 11.5 nm. This is consistent with the homogeneous gain saturation observed for alumino-silicate fibers.2 For erbium-doped fibers with GeO2:SiO2 cores, on the other hand, inhomogeneous saturation effects have been reported.3
Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental methods and a gain's model. Our experimental method allow us to measure the first homogeneous linewidth of the 1.5μ\muμm erbium emission with gain spectral hole burning consistently with the other measurement in the literature and the model explains the differences observed in literature between GSHB and other measurement methods.
The homogeneous linewidth of the transition I15/24−I13/24 in highly doped erbium fibers and its dependence with temperature in the range from 10 to 50 K are experimentally characterized using spectral hole burning. The homogeneous linewidth dependence with temperature is quadratic above 20 K where homogeneous broadening is dominated by two-phonon Raman processes, and linear at lower temperatures where direct phonon processes occur. This characteristic power-law dependence was also derived from transmittance measurements. The solution of nonlinear field equations using the results obtained from our experiments predicts that Gaussian probe pulses propagate at subluminal speed through the narrow spectral holes burned in erbium-doped fibers. For gigahertz pulses in the telecommunication window, a fractional delay as high as 0.6 is predicted.