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Quantum-Atom Optics Downunder (QAO)

Fabrication of Atom Chips with Femtosecond Laser Ablation

H. Wolff, S. Whitlock, Martin Lowe, James Wang, B. V. Hall, A. Sidorov, Peter Hannaford

Published Jan 1, 2007• 2 citations
Publisher

Abstract

We report on the development of a new microfabrication technique for atom chips which is based on femtosecond laser ablation of thin films and allows the production of arbitrary patterns of microwires. We describe the ablation procedure and present the results of microwire quality analysis, which involves SEM imaging and magnetic field microscopy. We also discuss the designs of magnetic fields above the microwires using particular patterns of wire edges. Simulations of the magnetic fields are compared with the magnetic sensor measurements.

DOI
10.1364/qao.2007.qwe4

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We report on the development of a new microfabrication technique for atom chips which is based on femtosecond laser ablation of thin films and allows the production of arbitrary patterns of microwires. We describe the ablation procedure and present the results of microwire quality analysis, which involves SEM imaging and magnetic field microscopy. We also discuss the designs of magnetic fields above the microwires using particular patterns of wire edges. Simulations of the magnetic fields are compared with the magnetic sensor measurements.
We report on the microfabrication of atom chips using a femtosecond laser ablation technique to arbitrarily sculpture both thin conductive metal films and permanent magnetic materials. We have measured the threshold fluences for a variety of materials relevant to atom chip development (Au, Ag, Cu, Cr, Ni, TbGdFeCo, SmCo, CoCr). The quality of the ablation process is investigated by extracting the power spectral density of the edge roughness from composite scanning electron microscope images and through the use of a magnetoresistance microscope to measure the associated magnetic field noise. Finally, we present results from a sculptured wire which produces an array of tunable double wells designed for near-surface force sensing with Bose-Einstein condensates.
Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. By comparing MR scans of a permanent magnetic atom chip to field profiles obtained using ultracold atoms, we show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.
Atom chips are robust and extremely powerful toolboxes for quantum optical experiments, since they make it possible to create exceedingly precise magnetic traps for neutral atoms with minimal field modulations. Accurate manipulation of trapped atoms is feasible with magnetic and electric fields created on the atom chip. Therefore atom chips with high quality surfaces and extremely well defined wires were build (roughness < 20nm). Furthermore new generations of atom chips were developed, like the multi-layer atom chip with contact-free wire crossings, the sub-micron structured atom chip and the semiconducting atom chip. Extensive characterisation measurements of atom chip wires demonstrated that the wires stand current densities of up to 10^7A/cm^2 for seconds and voltage differences of more than 500V over 10µm. From the different materials tested doped silicon with a thin silicon dioxide layer is the best qualified substrate for atom chip fabrication. The atom chips fabricated during this thesis have been used in many successful experiments, yielding numerous results. Moreover this thesis established the basics for many further experiments in atom physics and quantum optics and delivers complete instructions for the fabrication of all developed atom chips as well as an introduction to the experiments.
Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a $100\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}$-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.
This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.