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arXiv:cond-mat/0504686 · Physical Review A

Potential roughness near lithographically fabricated atom chips

P. Krüger, L. Mauritz Andersson, Stephan Wildermuth, Sebastian Hofferberth, Elmar Haller, Simon Aigner, S. Groth, I. Bar‐Joseph, Jörg Schmiedmayer

Published Dec 28, 2007• 64 citations
arXivHTMLPDF

Abstract

Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a $100\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}$-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.

DOI
10.1103/physreva.76.063621

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Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100\ensuremath-\ensuremathμm100\text{\ensuremath{-}}\ensuremath{\mu}\mathrm{m}100\ensuremath-\ensuremathμm-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.
Microscopic atom optical devices integrated on atom chips allow to precisely control and manipulate ultra-cold ( T < 1 µK) neutral atoms and Bose-Einstein condensates (BECs) close to surfaces. The relevant energy scale of a BEC is extremely small (down to < 10 −11 eV). Consequently, BECs can be utilized as a sensor for variations of the potential energy of the atoms close to the surface. Here we describe how to use trapped atoms as a measurement device and analyze the performance and flexibility of the field sensor. We demonstrate microscopic magnetic imaging with simultaneous high spatial resolution (3 µm) and high field sensitivity (4 nT). With one dimensional BECs, we probe the magnetic field variations close to the surface at distances down to a few microns. Measurements of the magnetic field of a 100 µm wide current carrying wire imply that the magnetic field variations stem from residual variations of the current flow direction, resulting from local properties of the wire. These disorder potentials found near lithographically fabricated wires are two orders of magnitude smaller than those measured close to electroplated conductors.
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom--surface interaction experiments.
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom–surface interaction experiments.
Magnetic trapping potentials for atoms on atom chips are determined by the current flow in the chip wires. By modifying the shape of the conductor we can realize specialized current flow patterns and therefore microdesign the trapping potentials. We have demonstrated this by nano-machining an atom chip using the focused ion beam technique. We built a trap, a barrier, and using a Bose-Einstein Condensate as a probe we showed that by polishing the conductor edge the potential roughness on the selected wire can be reduced. Furthermore, we give different other designs and discuss the creation of a one-dimensional magnetic lattice on an atom chip.
We present several toy models for predicting the character and strength of the roughness of ac Zeeman trapping potentials generated by imperfections in wire traces on an atom chip. An ac Zeeman trapping potential is generated by targeting a microwave or rf magnetic field at hyperfine or Zeeman ground-state transitions, respectively, while a dc Zeeman trap uses a static magnetic field to manipulate an atom via its magnetic moment. We find that an ac Zeeman trap suppresses potential roughness by several orders of magnitude with respect to a comparable dc Zeeman trap. This suppression stems from the inherent differences between an atom's response to dc and ac (namely rf and microwave) magnetic fields, in concert with how the ac skin effect smooths out a current distribution disturbed by a conductivity variation. For chip wires fabricated by evaporation, we find that an ac Zeeman trap for 87Rb^{87}\mathrm{Rb}87Rb atoms, located $100\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{m}$ from the chip and operating on a 6.8 GHz hyperfine transition, is expected to suppress potential roughness by a factor of $4\ifmmode\times\else\texttimes\fi{}{10}^{5}$ compared with a similar dc Zeeman trap. For a comparable ac Zeeman trap operating on a 10 MHz Zeeman transition, the suppression is $2\ifmmode\times\else\texttimes\fi{}{10}^{4}$. Conversely, the ac skin effect also slightly exacerbates potential roughness, in ac Zeeman traps, from defects in the sidewall of a wire trace.