IEEE Transactions on Applied Superconductivity
Component development for a 16 Gb/s RSFQ-CMOS interface system
Nobuyuki Yoshikawa, Toshio Abe, Yuichi Kato, H. Hoshina
Abstract
We have been developing an RSFQ-CMOS interface system. The system consists of three modules: a 1 to 32 bit DDST demultiplexer which converts a 16 Gb/s SFQ data input into a 32-channel 500 Mb/s output, asynchronous stacked-SQUID amplifiers which amplify an SFQ data input into a 5 mV voltage level output, and 77 K CMOS amplifiers which amplify a 5 mV voltage level input into a 5 V output at 500 MHz. We have implemented the asynchronous stacked-SQUID amplifier and the 77 K CMOS amplifier using the HYPRES 1 kA/cm/sup 2/ Nb process and the ROHM 0.6 /spl mu/m CMOS process, respectively. It was demonstrated that the 24-stage asynchronous stacked-SQUID amplifier amplifies an SFQ data input into a 2.0 mV voltage level at 600 MHz. The 77 K CMOS amplifier was shown to amplify a 5 mV voltage level input into 5 V at 500 MHz from the simulation, and a 175 mV voltage input into 3.5 V at 90 MHz from the experiment.