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Conference on Lasers and Electro-Optics

Photorefractive solitons and light-induced resonance control in semiconductor CdZnTe

Tal Schwartz, Yaniv Ganor, Tal Carmon, Raam Uzdin, S. Shwartz, Mordechai Segev, Uri El-Hanany

Published Jun 25, 2003• 1 citation

Abstract

Summary form only given. We demonstrate the formation of (1 + 1)D and of (2 + 1)D solitons in the photorefractive semiconductor CdZnTe:V, and show how to optically control the resonance intensity, which facilitates microseconds formation times at very low optical power. CdZnTe:V has a similar intensity-resonant mechanism as InP:Fe, with an important difference: the electrons and the holes exchange roles. Electrons are optically excited by a 1.3 /spl mu/m (or shorter) wavelength, whereas holes are thermally excited. However, the holes can also be excited optically, by a /spl sim/1.5 /spl mu/m wavelength beam. Here, we take advantage of this property to increase (and control) the hole excitation rate considerably by uniformly illuminating the crystal with a 1.48 /spl mu/m wavelength beam (the "background beam"). This background beam sets the resonance intensity to much higher values than temperature-driven resonance, thereby shortening their formation time to 10 microsecond with soliton intensity of /spl sim/20 W/cm/sup 2/ and background intensity of /spl sim/1 W/cm/sup 2/.

DOI: 10.1109/cleo.2002.1033903

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Summary form only given. We demonstrate the formation of (1 + 1)D and of (2 + 1)D solitons in the photorefractive semiconductor CdZnTe:V, and show how to optically control the resonance intensity, which facilitates microseconds formation times at very low optical power. CdZnTe:V has a similar intensity-resonant mechanism as InP:Fe, with an important difference: the electrons and the holes exchange roles. Electrons are optically excited by a 1.3 /spl mu/m (or shorter) wavelength, whereas holes are thermally excited. However, the holes can also be excited optically, by a /spl sim/1.5 /spl mu/m wavelength beam. Here, we take advantage of this property to increase (and control) the hole excitation rate considerably by uniformly illuminating the crystal with a 1.48 /spl mu/m wavelength beam (the "background beam"). This background beam sets the resonance intensity to much higher values than temperature-driven resonance, thereby shortening their formation time to 10 microsecond with soliton intensity of /spl sim/20 W/cm/sup 2/ and background intensity of /spl sim/1 W/cm/sup 2/.

Bright and dark spatial solitons are observed in an optically pumped semiconductor resonator. The pumping allows us to reduce considerably the light intensity necessary for the existence of the solitons and alleviates thermal load problems. Experiments are found to agree qualitatively with calculations based on a simple large-aperture semiconductor resonator model. The role of the signs of the absorptive and reactive nonlinearities in soliton existence is discussed in relation to the nonlinear resonance effect, the tilted-wave mechanism of pattern formation, and the sign of the population inversion.

Induced absorption was observed in an InP:Fe crystal under nanosecond pulse illumination at 1.06- mu m wavelength. The maximum induced absorption was 0.05 cm/sup -1/ when probed at a 1.06- mu m wavelength and 0.30 cm/sup -1/ when probed at a 1.30- mu m wavelength. The kinetics are studied together with the photocurrent giving the recombination times of holes (100 ns) at room temperature and an estimate for that of electrons (0.5 ns). The induced absorption is attributed to a population redistribution of the different iron impurity states. Computer simulations are able to explain all the features found in the experiments and give values for the photoionization cross sections, in particular for the unknown cross section Fe/sup 2+*/ to Fe/sup 3+/+e/sup -/.>