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Journal of the Optical Society of America B

Two-wave mixing gain enhancement in photorefractive CdZnTe:V by optically stimulated electron– hole resonance

Peter Pogany, Hans Joachim Eichler, Makram Hage-Ali

Published Nov 1, 1998• 14 citations
Publisher

Abstract

Large photorefractive two-wave mixing gain in CdZnTe:V at a 1.5-μm wavelength is demonstrated with an external dc field and a third incoherent stimulating beam of 1.3-μm wavelength. Resonant gain enhancement depending on the intensity of the incoherent illumination was observed. The maximum gain coefficient of 5.5 cm-1 is comparable with the value obtained with an ac field.

DOI
10.1364/josab.15.002716

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Large photorefractive two-wave mixing gain in CdZnTe:V at a 1.5-μm wavelength is demonstrated with an external dc field and a third incoherent stimulating beam of 1.3-μm wavelength. Resonant gain enhancement depending on the intensity of the incoherent illumination was observed. The maximum gain coefficient of 5.5 cm-1 is comparable with the value obtained with an ac field.
Summary form only given. We demonstrate the formation of (1 + 1)D and of (2 + 1)D solitons in the photorefractive semiconductor CdZnTe:V, and show how to optically control the resonance intensity, which facilitates microseconds formation times at very low optical power. CdZnTe:V has a similar intensity-resonant mechanism as InP:Fe, with an important difference: the electrons and the holes exchange roles. Electrons are optically excited by a 1.3 /spl mu/m (or shorter) wavelength, whereas holes are thermally excited. However, the holes can also be excited optically, by a /spl sim/1.5 /spl mu/m wavelength beam. Here, we take advantage of this property to increase (and control) the hole excitation rate considerably by uniformly illuminating the crystal with a 1.48 /spl mu/m wavelength beam (the "background beam"). This background beam sets the resonance intensity to much higher values than temperature-driven resonance, thereby shortening their formation time to 10 microsecond with soliton intensity of /spl sim/20 W/cm/sup 2/ and background intensity of /spl sim/1 W/cm/sup 2/.
We have observed two-beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron-hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.
We have observed two-wave mixing in semi-insulating AlGaAs/GaAs multiple quantum well structures at wavelengths near the exciton absorption. The photorefractive index changes are caused by the Franz–Keldysh effect on quantum-confined excitons. Photorefractive gains larger than 200 cm−1 are obtained for the first time at wavelengths near 836 nm using stationary fringes and dc applied fields up to 5 kV/cm. The direction of energy transfer between the two beams is determined by the direction of applied electric field.