We report experimental evidences about coherent solitonic collisions in photorefractive semiconductor InP:Fe, investigating the effects of temperature, light intensity and external electric field on the trapping processes.
This paper extends the existing theory of two-carrier photorefractivity resonance, which is generally applied to iron doped indium phosphide (InP:Fe), to the case of low nonharmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.
Iron-ion concentrations have been determined from measurements of the photoinduced-grating erasure times. We checked the accuracy of this method by performing two-wave mixing experiments at λ = 1.32 μm without an applied field. After verifying the fit of the extended single-defect model with indirect transitions and the two-wave mixing gain data at λ = 1.06 μm, we conclude that the indirect transitions involving the excited state of Fe2+ can induce a reduction of the photorefractive effect in InP:Fe when the dominant photocarriers are holes at room temperature.