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arXiv:0909.1217 · Physical Review A

Theory of photorefractive resonance for localized beams in two-carrier photorefractive systems

Hervé Leblond, Nicolas Fressengeas

Published Sep 25, 2009• 4 citations
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Abstract

This paper extends the existing theory of two-carrier photorefractivity resonance, which is generally applied to iron doped indium phosphide (InP:Fe), to the case of low nonharmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.

DOI
10.1103/physreva.80.033837

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Journal of the Optical Society of America B•Dec 1, 1990•32 citations
This paper extends the existing theory of two-carrier photorefractivity resonance, which is generally applied to iron doped indium phosphide (InP:Fe), to the case of low nonharmonic illumination. The space charge field profile is computed, and the variations of its amplitude, width and position are determined as functions of the background intensity. The effect of photorefractive resonance on these quantities is evidenced, contributing to the understanding of published experimental results in InP:Fe.
Iron-ion concentrations have been determined from measurements of the photoinduced-grating erasure times. We checked the accuracy of this method by performing two-wave mixing experiments at λ = 1.32 μm without an applied field. After verifying the fit of the extended single-defect model with indirect transitions and the two-wave mixing gain data at λ = 1.06 μm, we conclude that the indirect transitions involving the excited state of Fe2+ can induce a reduction of the photorefractive effect in InP:Fe when the dominant photocarriers are holes at room temperature.
We have observed two-beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron-hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.
We show that even if there is no direct hole–electron competition in InP:Fe the gain is lower than expected. We attribute this reduction of the gain to a thermally induced hole–electron competition that involves the excited state of Fe2+ (5T2). We present a new model for the photorefractive effect in InP:Fe, which we use to interpret our beam-coupling results. Some material parameters of the InP:Fe sample and particularly of the excited state are deduced. The same energy-transfer measurements conducted in GaAs give us the ratio of hole and electron photoionization cross sections.