Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of Quantum Electronics

Interband nonlinear optical generation in presence of intersubband light in asymmetric quantum wells

Arup Neogi, Yutaka Takahashi, Hitoshi Kawaguchi

Published Apr 1, 1996• 9 citations
Publisher

Abstract

The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility /spl chi//sub c2-h1//sup (2)/ arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.

DOI
10.1109/3.488845

Related papers

Interband difference-frequency generation by means of resonant intersubband transitions in asymmetric quantum wells

Arup Neogi, Yutaka Takahashi, Hitoshi Kawaguchi

We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.

Journal of the Optical Society of America B•Mar 1, 1997•5 citations

Effect of nonlinear wave mixing on ultrafast modulation of interband light in semiconductor quantum wells

Arup Neogi

We investigate the effect of an induced sum-frequency signal on the transient modulation of interband-resonant probe light by a train of intersubband-resonant coupling light pulses in undoped quantum wells. The origin of the generated sum-frequency signal lies in the asymmetry of the three-level quantum well structure. The modulation characteristics are found to be significantly affected in the presence of a strong sum-frequency signal that builds up proportionately to the input probe field.

Journal of Experimental and Theoretical Physics Letters•Sep 1, 1997•1 citation

Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells

Anirban Neogi, H. Yoshida, Teruo Mozume +1 more

We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.

Journal of Applied Physics•Mar 15, 1999•13 citations

Analysis of reduced interband absorption mechanisms in semiconductor quantum wells

D.S. Lee, Kevin J. Malloy

Mechanisms for reduced interband absorption using intersubband coherence or intersubband coupling in semiconductor quantum wells are analyzed by exactly solving the density matrix equation. By placing some mild limitations on the diagonal density matrix elements, general analytic solutions are obtained without weak-field restrictions. Our solutions demonstrate reduced absorption, various nonlinear processes, and coupling-field-modulation of interband transitions. Our results agree well with previous results for three-level atomic systems, give insights into nonlinear mechanisms, and point out the importance of nonperturbative approaches to this class of problems.>

IEEE Journal of Quantum Electronics•Jan 1, 1994•36 citations

Nonlinear intersubband optical absorption of asymmetric semiconductor quantum wells pumped by terahertz and infrared fields

Haiyan Zhu, Tongyi Zhang, Wei Zhao

We investigate the conduction intersubband linear response of a n-type quantum well driven by one or two infrared optical fields with arbitrary strengths. The fields couple the third subband to the second energy subband and the ground subband, forming a Λ system. We investigate the dependences of the absorption spectrum on the pump field strengths. The results for the equal Rabi frequencies can be understood in terms of quantum coherence processes of the intersubband transitions, such as coherent population trapping, and electromagnetically induced transparency. The effects of different Rabi frequencies on the absorption spectrum due to fields are also discussed.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jul 3, 2009•0 citations

Linear and nonlinear optical properties of a two-subband system in a symmetric semiconductor quantum well

Spyridon G. Kosionis, Andreas Terzis, Constantinos Simserides +1 more

We study the linear and nonlinear optical response of intersubband transitions in a semiconductor quantum well. We describe the coupling of the quantum well structure with the electromagnetic field by using the nonlinear density matrix equations, in the two-subband approximation. We provide proper approximate analytical solutions to these equations that are used for the closed-form determination of the optical susceptibilities χ(1), χ(3), and χ(5). We also explore the dependence of χ(1), χ(3), and χ(5) on the electron sheet density for a specific double GaAs/AlGaAs quantum well.

Journal of Applied Physics•Aug 1, 2010•20 citations
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility /spl chi//sub c2-h1//sup (2)/ arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.
Mechanisms for reduced interband absorption using intersubband coherence or intersubband coupling in semiconductor quantum wells are analyzed by exactly solving the density matrix equation. By placing some mild limitations on the diagonal density matrix elements, general analytic solutions are obtained without weak-field restrictions. Our solutions demonstrate reduced absorption, various nonlinear processes, and coupling-field-modulation of interband transitions. Our results agree well with previous results for three-level atomic systems, give insights into nonlinear mechanisms, and point out the importance of nonperturbative approaches to this class of problems.>
We investigate the conduction intersubband linear response of a n-type quantum well driven by one or two infrared optical fields with arbitrary strengths. The fields couple the third subband to the second energy subband and the ground subband, forming a Λ system. We investigate the dependences of the absorption spectrum on the pump field strengths. The results for the equal Rabi frequencies can be understood in terms of quantum coherence processes of the intersubband transitions, such as coherent population trapping, and electromagnetically induced transparency. The effects of different Rabi frequencies on the absorption spectrum due to fields are also discussed.
We study the linear and nonlinear optical response of intersubband transitions in a semiconductor quantum well. We describe the coupling of the quantum well structure with the electromagnetic field by using the nonlinear density matrix equations, in the two-subband approximation. We provide proper approximate analytical solutions to these equations that are used for the closed-form determination of the optical susceptibilities χ(1), χ(3), and χ(5). We also explore the dependence of χ(1), χ(3), and χ(5) on the electron sheet density for a specific double GaAs/AlGaAs quantum well.