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Journal of the Optical Society of America B

Interband difference-frequency generation by means of resonant intersubband transitions in asymmetric quantum wells

Arup Neogi, Yutaka Takahashi, Hitoshi Kawaguchi

Published Mar 1, 1997• 5 citations
Publisher

Abstract

We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.

DOI
10.1364/josab.14.000570

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We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility /spl chi//sub c2-h1//sup (2)/ arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field.
The effect of the depolarization field on the doubly resonant frequency mixing due to resonant intersubband transitions in asymmetric quantum wells, with only the ground subband occupied, is discussed. Calculations are performed in the framework of the perturbative density matrix formulation with relaxation time approximation. The results show that in the considered system the depolarization effect can be included by simple replacement (in the one-electron expression for the nonlinear susceptibility) of the intersubband energy by the depolarization shifted intersubband energy.
In this article, we have investigated the optical properties of intersubband transitions in an asymmetric AlGaAs/GaAs coupled quantum wells system. We solved the Schrödinger equation numerically using homemade finite difference codes to determine the electronic structure. The susceptibilities were calculated in frame of density matrix equations. The effect of relative phase variation between applied fields, on the linear absorption coefficients, relative refractive index changes, and group velocity has been investigated. The results show that the linear optical properties are extremely phase-dependent. By adjusting the phase, it is possible to obtain absorption curves with dispersion-like profile and vice versa.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.
We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.