Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Conference on Emerging Trends in Electronic and Photonic Devices & Systems (ELECTRO)

Optical bistable switching in a hybrid magnetic semiconductor

Sukanta Kumar Tripathy, Mihir Hota

Published Dec 1, 2009• 2 citations
Publisher

Abstract

In this paper we report the possibility of optical bistable switching in a hybrid magnetic semiconductor. We on the basis of our formulation found that a magnetic semiconductor can be made to behave as a optical bistable switch by suitably controlling the magnetic impurity concentration.
DOI
10.1109/electro.2009.5441036

Related papers

Optical Bistability And Switching By Non Inear Waveguiding In Semiconductor Lasers And Laser Amplifiers

John Gerard McInerney, Yuan Li, Theodore C. Salvi +1 more

Bistable optical devices (BODs) are interesting for optical switching, limiting, memory, signal conditioning and logic [1]. Semiconductor-based BODs are especially promising because their large nonlinearities should permit development of compact, rugged and efficient systems. Here we concentrate on active semiconductor BODs and switches, that is those which have internal gain, such as injection lasers and amplifiers.

Digest on Nonlinear Optics: Materials, Phenomena and Devices•Jan 1, 1990•1 citation

Optical bistability and multistability via magnetic field intensities in a solid

Hamid Reza Hamedi

Optical bistability (OB) and optical multistability (OM) behavior in molecular magnets is theoretically studied. It is demonstrated that the OB of the system can be controlled via adjusting the magnetic field intensity. In addition, it is shown that the frequency detuning of probe and coupling fields, as well as the cooperation parameter, has remarkable effects on the OB behavior of the system. Also, we find that OB can be converted to OM through the magnitude of control-field detuning. Our results can be used as a guideline for optimizing and controlling the switching process in the crystal of molecular magnets.

Applied Optics•Aug 13, 2014•24 citations

Ultrafast switching based on field optical bistability in nano-film of semiconductor

Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 1, 2016•0 citations

Ultrafast switching based on field optical bistability in nano-film of semiconductor

Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Sep 16, 2016•2 citations

Bistability in two-mode semiconductor lasers via gain saturation

Carson L. Tang, Alfred T. Schremer, T. Fujita

The conditions required to achieve bistability in two-mode semiconductor lasers via the nonlinearity associated with gain saturation are discussed. The laser can be switched between the bistable states through coherent or incoherent optical control. Wavelength bistability in such a laser is demonstrated experimentally.

Applied Physics Letters•Nov 2, 1987•80 citations

Magnetooptical bistability of layer semiconductors in the field of exciton absorption

Claudia Yu. Zenkova, Valeriy M. Kramar, N. K. Kramar +1 more

The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI2 as an example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer crystal structure.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 10, 2008•0 citations
Optical bistability (OB) and optical multistability (OM) behavior in molecular magnets is theoretically studied. It is demonstrated that the OB of the system can be controlled via adjusting the magnetic field intensity. In addition, it is shown that the frequency detuning of probe and coupling fields, as well as the cooperation parameter, has remarkable effects on the OB behavior of the system. Also, we find that OB can be converted to OM through the magnitude of control-field detuning. Our results can be used as a guideline for optimizing and controlling the switching process in the crystal of molecular magnets.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI2 as an example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer crystal structure.