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Journal of the Optical Society of America B

Steady-state propagation of ultrashort optical pulses in semiconductor excitonic medium

Irina B. Talanina

Published Jun 1, 1996• 9 citations
Publisher

Abstract

The form-invariant coherent pulse propagation in semiconductors excited at the 1s-exciton resonance is studied analytically with the reduced semiconductor Maxwell–Bloch equations. The sech-shaped pulse solution for the electric field is presented. The effects of Coulomb interactions between excitons and spatial dispersion are discussed. Applications to CdS and CdSe crystals are made.

DOI
10.1364/josab.13.001308

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physica status solidi (b)•Mar 1, 1995•9 citations
The form-invariant coherent pulse propagation in semiconductors excited at the 1s-exciton resonance is studied analytically with the reduced semiconductor Maxwell–Bloch equations. The sech-shaped pulse solution for the electric field is presented. The effects of Coulomb interactions between excitons and spatial dispersion are discussed. Applications to CdS and CdSe crystals are made.
The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.
Femtosecond-pulse propagation in resonantly excited semiconductors is investigated by numerically solving the semiconductor Maxwell-Bloch equations for plane waves. For excitation at the exciton resonance, it is shown that the pulse absorption exhibits a strongly nonlinear dependence on the input pulse area. Very long propagation distances for strong pulses are observed, but even when all dephasing processes have been neglected, no lossless propagation (self-induced transparency) was found. The influence of the electron-hole many-body effects, nonequilibrium carrier relaxation, and optical dephasing on the pulse-propagation dynamics is studied. The exchange interaction in the electron-hole plasma is shown to support large propagation distances. For excitation of the continuum states, the dependence of the absorption on the intensity of the input pulse is reduced due to the rapid carrier relaxation into quasiequilibrium distributions.
For pt.I see ibid., vol.10, p.425 (1977). The effect of spatial dispersion or exciton formation on the steady propagation of a coherent light pulse in a dielectric medium is studied. The optical Bloch equation for a lattice of atomic dipoles coupled to one another by an exchange-type interaction is solved simultaneously with the Maxwell equation by the method of power-series expansion developed in the preceding paper. Two kinds of pulse solutions are obtained in general: one propagating by the medium of the radiation field and the other by excitation transfer between atomic dipoles. The former solution is SIT-like in the short pulse limit, but a polariton-soliton or a standing wave of non-linear polariton if the pulse width is long. The latter is an exciton-soliton containing little photon component. When the pulse width is extremely long, there appears a polariton-soliton of a new type in which the two propagation mechanisms are mixed. It is found that the spatial dispersion prevents the polariton-soliton solutions from existing in a certain frequency range. This effect is explained on the basis of the functional behavior of the dispersion relation of the non-linear polariton.
Summary form only given.Free-exciton resonances in semiconductors cannot be treated as bare two-level systems because Coulomb interaction and correlation/exchange effects between the carriers substantially modify the optical Bloch equations that describe the behavior of a two-level system under the influence of an external light field. The semiconductor Bloch equations (SBEs) give a more realistic description of the dynamic response of the system on ultrafast time scales. Therefore, the coherent transients known from two-level systems in atomic physics have been found to be substantially modified in semiconductors. Whereas self-induced transparency (SIT) on bound excitons, which are known to behave as atomiclike two-level systems, has been found, the question whether SIT could also appear on a free-exciton resonance is still subject of controversial discussions. We addressed this problem in a combined theory-experiment study.
Abstract Measuring the transform‐limited time‐resolved spectrum of a coherent laser pulse allows one to determine the amplitude and phase of the pulse electric field. From the reshaping of pulses transmitted through a thin semiconductor platelet in resonance with an exciton transition in case of the donor bound exciton in CdS the effects of coherent exciton–photon interaction for different laser intensities can be studied. While at low intensities the expected polariton beating connected with the formation of a 0π‐pulse is observed, at sufficiently high intensities changes in the pulse shape occur that are ascribed to self‐induced transparency of the bound exciton states.