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Journal of Nonlinear Optical Physics & Materials

EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS

Irina B. Talanina

Published Jan 1, 1996• 1 citation
Publisher

Abstract

The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.

DOI
10.1142/s0218863596000064

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Coupled Maxwell-Bloch equations with inhomogeneous broadening for a 3-level system

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The phenomenon that describes the effect of a coherent medium response to an incident electric field, to which the medium is totally transparent and which undergoes lossless propagation, is known as self-induced transparency (SIT). SIT was first discovered by McCall and Hahn (1969) in the case of nondegenerate two-level atoms. Special solutions for the two-level system were found by Lamb (1971), while the initial value problem for the propagation of a pulse through a resonant two-level optical medium was solved by Inverse Scattering Transform (IST) in [1, 2]. It is possible to formulate the SIT equations in the framework of the IST also in the case of a three-level system, as in [3]. While the associated scattering problem is the same as for the coupled nonlinear Schrödinger equation, the time evolution depends on asymptotic values of the material polarizability envelopes and is highly non-trivial. This talk will address the solution of the initial value problem for the SIT equations for three level systems, for generic preparation of the medium, and

•Jan 1, 2003•0 citations
The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.
Summary form only given.Free-exciton resonances in semiconductors cannot be treated as bare two-level systems because Coulomb interaction and correlation/exchange effects between the carriers substantially modify the optical Bloch equations that describe the behavior of a two-level system under the influence of an external light field. The semiconductor Bloch equations (SBEs) give a more realistic description of the dynamic response of the system on ultrafast time scales. Therefore, the coherent transients known from two-level systems in atomic physics have been found to be substantially modified in semiconductors. Whereas self-induced transparency (SIT) on bound excitons, which are known to behave as atomiclike two-level systems, has been found, the question whether SIT could also appear on a free-exciton resonance is still subject of controversial discussions. We addressed this problem in a combined theory-experiment study.
Self-induced transparency (SIT) is a kind of coherent transient phenomena in two-level atomic system. The optical pulse with an area that is an integer multiple of 2π, which causes SIT in an absorber, is stable and a kind of soliton. Thus SIT is expected to be useful in pulse compression and pulse shaping. In this paper, we discuss some problems in experiments of SIT and surveys the experimental results of SIT. It is also described the recent experimental results of coherent nonlinear pulse propagation in BiI3 crystal using tunable sub-picosecond pulses.
We consider an optical pulse propagation in a one-dimensional nonlinear periodic structure doped uniformly with inhomogeneously broadening two-level atoms wherein the pulse propagation is governed by the nonlinear coupled mode-Maxwell Bloch equations. We investigate the pulse-train like periodic waves as well as bright and dark solitons near the photonic bandgap structure under the influence of self-induced transparency (SIT) effect. Further, we demonstrate that the resulting bright and dark SIT Bragg solitons may be realized both in anomalous and normal dispersion regimes, and this novel concept is ultimately the crux of this paper.
This paper is the third part of a theory of the coherent propagation of light in semiconductors. Based on the previous papers (Ⅰ) and (Ⅱ), the Maxwell-Bloch equation describing the coherent propagation of light in semiconductors is derived; the equation is then used to discuss a number of possible effects of coherent propagation in both interband transitions and exciton transitions. In particular, the phenomena of self-induced transparency are analysed, and it is shown that the phenomena may occur in the above two transitions.
The phenomenon that describes the effect of a coherent medium response to an incident electric field, to which the medium is totally transparent and which undergoes lossless propagation, is known as self-induced transparency (SIT). SIT was first discovered by McCall and Hahn (1969) in the case of nondegenerate two-level atoms. Special solutions for the two-level system were found by Lamb (1971), while the initial value problem for the propagation of a pulse through a resonant two-level optical medium was solved by Inverse Scattering Transform (IST) in [1, 2]. It is possible to formulate the SIT equations in the framework of the IST also in the case of a three-level system, as in [3]. While the associated scattering problem is the same as for the coupled nonlinear Schrödinger equation, the time evolution depends on asymptotic values of the material polarizability envelopes and is highly non-trivial. This talk will address the solution of the initial value problem for the SIT equations for three level systems, for generic preparation of the medium, and