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Acta Physica Sinica

A THEORY OF COHERENT PROPAGATION OF LIGHT WAVE IN SEMICONDUCTORS (Ⅲ)

GAN ZI-ZHAO, Guo-Zhen Yang, (1)北京大学物理系; (2)中国科学院物理研究所

Published Jan 1, 1981• 0 citations
Publisher

Abstract

This paper is the third part of a theory of the coherent propagation of light in semiconductors. Based on the previous papers (Ⅰ) and (Ⅱ), the Maxwell-Bloch equation describing the coherent propagation of light in semiconductors is derived; the equation is then used to discuss a number of possible effects of coherent propagation in both interband transitions and exciton transitions. In particular, the phenomena of self-induced transparency are analysed, and it is shown that the phenomena may occur in the above two transitions.

DOI
10.7498/aps.30.1056

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This paper is the third part of a theory of the coherent propagation of light in semiconductors. Based on the previous papers (Ⅰ) and (Ⅱ), the Maxwell-Bloch equation describing the coherent propagation of light in semiconductors is derived; the equation is then used to discuss a number of possible effects of coherent propagation in both interband transitions and exciton transitions. In particular, the phenomena of self-induced transparency are analysed, and it is shown that the phenomena may occur in the above two transitions.
This paper is the third part of a series dealing with the theory of the coherent propagation of light in semiconductors. Based on the results of our previous papers, the "Maxwell-Bloch equations" describing the coherent propagation of light in semiconductors are derived. These equations are used to discuss a number of possible effects of the coherent propagation on both interband and exciton transitions. In particular, we analyze self-induced transparency and show that this effect can occur for both interband and exciton transitions.
This paper is the second part of a theory of the coherent propagation of light wave in semiconductors. After considering the interaction between electrons, the problem of a semiconductor interacting with light is discussed and the equation of exciton polarization wave excited by light wave is obtained. We point out that the equation can be approximated by a set of linear ones and the exciton polarization wave can be regarded as a Bose field only in the limit of low excitation. In this paper, the problem of coherent excitation of discrete exciton level is also discussed specifically. It is shown that the discrete exciton level system excited coherently is approximately equivalent to a two-level atom system excited by light wave in which the difference of energy level is dependent on the degree of excitation and the density of equivalent "two-level atoms" is determined by features of the exciton state wave function.
This paper contains the second part of a theory of the coherent propagation of a light wave in semiconductors. After considering the interaction among the electrons, we discuss the matter of the interaction of a semiconductor with light and derive equations of motion for the polarization wave of the excitons which have been excited by the light. We show how our equations can be approximated by linear ones and how the exciton polarization wave can be regarded as a Bose field in the limit of low excitation. In this paper we also discuss in detail the problem of the coherent excitation of discrete exciton levels. We show that the coherently excited discrete exciton is approximately equivalent to a two-level atom which is excited by a light wave; the atom energy-level spacing is a function of the degree of excitation, and the density of equivalent "two-level atoms" is determined by features of the exciton-state wave function.
The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.
A review is given of the current status of the self-induced transparency effect. The McCall–Hahn theory (2π pulses) is considered and its generalization to the case of phase modulation of radiation pulses, degeneracy of transitions, and two-photon resonance is discussed. The relationship with the theory of nonlinear waves, obeying the Korteweg–de Vries equation, is pointed out. The possibility of similar coherent effects in direct interband transitions in semiconductors is discussed. A summary is given of the experimental results demonstrating a strong fall in the absorption and a considerable slowing down of light pulses, typical of the self-induced transparency. Possible physical applications of the effect, based on these properties, are discussed.