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Acta Physica Sinica

A THEORY OF COHERENT PROPAGATION OF LIGHT IN SEMICONDUCTORS (Ⅰ)

GAN ZI-ZHAO, Guo-Zhen Yang, (1)北京大学物理系; (2)中国科学院物理研究所

Published Jan 1, 1981• 0 citations
Publisher

Abstract

This paper is the first part of a theory of the coherent propagation of light in semiconductors. When the interaction between electrons is neglected we obtain the Bloch equation describing the matrix elements of interband transitions induced by coherent light in semiconductors. The interband transitions in the system are analogous in form to those of an inhomogeneously broadened two-level system, but a particular type of multiphoton process will occur under the action of intense light.

DOI
10.7498/aps.30.878

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This paper is the first part of a theory of the coherent propagation of light in semiconductors. When the interaction between electrons is neglected we obtain the Bloch equation describing the matrix elements of interband transitions induced by coherent light in semiconductors. The interband transitions in the system are analogous in form to those of an inhomogeneously broadened two-level system, but a particular type of multiphoton process will occur under the action of intense light.
This paper is the third part of a theory of the coherent propagation of light in semiconductors. Based on the previous papers (Ⅰ) and (Ⅱ), the Maxwell-Bloch equation describing the coherent propagation of light in semiconductors is derived; the equation is then used to discuss a number of possible effects of coherent propagation in both interband transitions and exciton transitions. In particular, the phenomena of self-induced transparency are analysed, and it is shown that the phenomena may occur in the above two transitions.
This paper is the third part of a series dealing with the theory of the coherent propagation of light in semiconductors. Based on the results of our previous papers, the "Maxwell-Bloch equations" describing the coherent propagation of light in semiconductors are derived. These equations are used to discuss a number of possible effects of the coherent propagation on both interband and exciton transitions. In particular, we analyze self-induced transparency and show that this effect can occur for both interband and exciton transitions.
This paper is the second part of a theory of the coherent propagation of light wave in semiconductors. After considering the interaction between electrons, the problem of a semiconductor interacting with light is discussed and the equation of exciton polarization wave excited by light wave is obtained. We point out that the equation can be approximated by a set of linear ones and the exciton polarization wave can be regarded as a Bose field only in the limit of low excitation. In this paper, the problem of coherent excitation of discrete exciton level is also discussed specifically. It is shown that the discrete exciton level system excited coherently is approximately equivalent to a two-level atom system excited by light wave in which the difference of energy level is dependent on the degree of excitation and the density of equivalent "two-level atoms" is determined by features of the exciton state wave function.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
Summary form only given.Free-exciton resonances in semiconductors cannot be treated as bare two-level systems because Coulomb interaction and correlation/exchange effects between the carriers substantially modify the optical Bloch equations that describe the behavior of a two-level system under the influence of an external light field. The semiconductor Bloch equations (SBEs) give a more realistic description of the dynamic response of the system on ultrafast time scales. Therefore, the coherent transients known from two-level systems in atomic physics have been found to be substantially modified in semiconductors. Whereas self-induced transparency (SIT) on bound excitons, which are known to behave as atomiclike two-level systems, has been found, the question whether SIT could also appear on a free-exciton resonance is still subject of controversial discussions. We addressed this problem in a combined theory-experiment study.
A microscopic many-body theory for the optical and electronic properties of semiconductors is reviewed with an emphasis on the role of correlation effects. At the semiclassical level, the semiconductor Bloch equations include many-body effects via bandgap and field renormalization as well as correlation contributions representing two electron-hole pair amplitudes, excitonic populations, and coupled interband and intraband coherences. These Coulomb interaction induced carrier correlations lead to characteristic signatures in nonlinear semiconductor spectroscopy. At the fully quantum mechanical level the dominant light-matter correlations are described by coupled semiconductor Bloch and luminescence equations. Excitonic emission properties of quantum well and microcavity systems are discussed, including effects such as coherent signatures in the secondary emission and coherent control of the emitted light.