Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Quantum Electronics and Laser Science Conference

Many-body theory of Rabi flopping and photon echo in semiconductors

S. W. Koch, Rolf H. Binder, Markus Lindberg

Published May 12, 1991• 1 citation
OpenAlex

Abstract

The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.

Related papers

Femtosecond coherent transients of biexciton and exciton systems in semiconductors

Makoto Kuwata‐Gonokami

Progress in the production of tunable femtosecond pulses enables us to study resonant coherent optical transients in semiconductors such as AC stark effect, photon echo and quantum beats.1 It has been shown that many body Coulomb and exchange interaction lead to features which are specific to semiconductors.2,3 The semiconductor Bloch equations (SBE) within the mean field approximation have been successfully applied to explain the essential features of experiments performed with III–V and II–VI semiconductors.

•May 8, 1994•0 citations

Theory of the semiconductor photon echo

Markus Lindberg, Rolf H. Binder, Stephan W. Koch

The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A continuous transition between free-induction decay and photon-echo signal is obtained with increasing excitation amplitude. A perturbative analytical analysis of the equations allows one to identify the role of the many-body effects in producing the different features.

Physical Review A•Feb 1, 1992•212 citations

Maxwell-Bloch formulation for semiconductors: Effects of coherent Coulomb exchange

Charles M. Bowden, Govind Prasad Agrawal

A generalized Bloch-Maxwell formulation for laser-field-coupled semiconductors is derived from a two-band model which includes direct Coulomb interactions. The momentum-dependent, microscopic, electron-hole equations of motion in the time-dependent Hartree-Fock approximation and neglecting interband exchange interactions form the starting point for the formulation. A self-consistent set of coupled equations in four dynamical variables for the medium, together with the electric-field amplitude coupled through the Maxwell wave equation in a semiclassical approximation, are obtained to lowest order in the coherent Coulomb exchange interaction and the density-of-states distribution. Intrinsic optical bistability is predicted in a steady state due to a carrier density-dependent redshift of the band edge due explicitly to coherent Coulomb exchange. Integration of the dynamical equations for conditions which correspond to the ultrafast time regime exhibit intrinsic adiabatic inversion, adiabatic following, anomalous Rabi cycling, and unique, as well as fast, optical switching, all of which depend upon the coherent Coulomb exchange interaction.

Physical Review A•May 1, 1995•38 citations

R2.1 Dephasing processes in InGaAs quantum dots

J.H Davies, A.R Long

The dynamics of electrons and holes in semiconductors and semiconductor heterostructures have been extensively discussed in the literature, and are governed by their mutual Coulomb interaction, by their interaction with lattice vibrations (phonons) and by their radiative recombination (for an overview see e.g. Ref. [1]). A powerful technique to study the carrier dynamics in semiconductors utilizes short optical pulses to photoexcite electrons from the valence to the conduction band (i.e. to create electron-hole pairs) that subsequently relax until the photon energy stored in the medium is dissipated and the system has recovered the thermal equilibrium. The dynamics of the carriers photoexcited by the short optical pulse can be followed by monitoring two main optical observables: the interband population difference and the induced polarization. Both quantities decay with time after the photoexcitation due to the carrier dynamics. While the induced polarization (which is an ensemble average over many photoexcited dipole moments) is sensitive to scattering events that break the phase relationship among the individual dipoles and/or with the light field creating them (dephasing processes), the population difference is sensitive only to events that change the energy state of the carriers. Transient coherent optical spectroscopy addresses the time-evolution of the induced polarization in the time-regime during and immediately following the photoexcitation by a short laser pulse, in which the photoexcited dipoles have retained a defined phase relationship among each other and with the exciting coherent radiation.

CRC Press eBooks•May 1, 2003•0 citations

Microscopic Theory of Rabi Flopping, Photon Echo, and Resonant Pulse Propagation in Semiconductors

Stephan W. Koch, A. Knorr, Rolf H. Binder +1 more

Abstract The phenomena of Rabi oscillations, resonant pulse propagation, and photon echo in semiconductors are investigated by numerically solving the full semiconductor Bloch equations for the example of bulk CdSe. The calculations are done for resonant femtosecond excitation at the exciton resonance. The many‐body modifications of Rabi flopping and semiconductor photon echo are discussed for a thin medium, whereas the propagation of weak and strong pulses is analyzed for an extended material. Rabi flopping of the density can lead to field reamplification and thus to long propagation distances of sufficiently strong pulses and to pulse break‐up. The area theorem known from self‐induced transparency (SIT) in atomic systems is generalized for the case of phase modulated fields and shown to be modified significantly in semiconductors. Even though no ideal SIT occurs, the Coulomb interacting electron–hole system nevertheless seems to support extremely long propagation distances of so‐called π‐pulses.

physica status solidi (b)•Sep 1, 1992•34 citations

Photon echo and valence-band mixing in semiconductor quantum wells

Yiping Z. Hu, Rolf H. Binder, S. W. Koch

The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.

Physical review. B, Condensed matter•Jun 15, 1993•22 citations
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
Progress in the production of tunable femtosecond pulses enables us to study resonant coherent optical transients in semiconductors such as AC stark effect, photon echo and quantum beats.1 It has been shown that many body Coulomb and exchange interaction lead to features which are specific to semiconductors.2,3 The semiconductor Bloch equations (SBE) within the mean field approximation have been successfully applied to explain the essential features of experiments performed with III–V and II–VI semiconductors.
The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A continuous transition between free-induction decay and photon-echo signal is obtained with increasing excitation amplitude. A perturbative analytical analysis of the equations allows one to identify the role of the many-body effects in producing the different features.
A generalized Bloch-Maxwell formulation for laser-field-coupled semiconductors is derived from a two-band model which includes direct Coulomb interactions. The momentum-dependent, microscopic, electron-hole equations of motion in the time-dependent Hartree-Fock approximation and neglecting interband exchange interactions form the starting point for the formulation. A self-consistent set of coupled equations in four dynamical variables for the medium, together with the electric-field amplitude coupled through the Maxwell wave equation in a semiclassical approximation, are obtained to lowest order in the coherent Coulomb exchange interaction and the density-of-states distribution. Intrinsic optical bistability is predicted in a steady state due to a carrier density-dependent redshift of the band edge due explicitly to coherent Coulomb exchange. Integration of the dynamical equations for conditions which correspond to the ultrafast time regime exhibit intrinsic adiabatic inversion, adiabatic following, anomalous Rabi cycling, and unique, as well as fast, optical switching, all of which depend upon the coherent Coulomb exchange interaction.
The dynamics of electrons and holes in semiconductors and semiconductor heterostructures have been extensively discussed in the literature, and are governed by their mutual Coulomb interaction, by their interaction with lattice vibrations (phonons) and by their radiative recombination (for an overview see e.g. Ref. [1]). A powerful technique to study the carrier dynamics in semiconductors utilizes short optical pulses to photoexcite electrons from the valence to the conduction band (i.e. to create electron-hole pairs) that subsequently relax until the photon energy stored in the medium is dissipated and the system has recovered the thermal equilibrium. The dynamics of the carriers photoexcited by the short optical pulse can be followed by monitoring two main optical observables: the interband population difference and the induced polarization. Both quantities decay with time after the photoexcitation due to the carrier dynamics. While the induced polarization (which is an ensemble average over many photoexcited dipole moments) is sensitive to scattering events that break the phase relationship among the individual dipoles and/or with the light field creating them (dephasing processes), the population difference is sensitive only to events that change the energy state of the carriers. Transient coherent optical spectroscopy addresses the time-evolution of the induced polarization in the time-regime during and immediately following the photoexcitation by a short laser pulse, in which the photoexcited dipoles have retained a defined phase relationship among each other and with the exciting coherent radiation.
Abstract The phenomena of Rabi oscillations, resonant pulse propagation, and photon echo in semiconductors are investigated by numerically solving the full semiconductor Bloch equations for the example of bulk CdSe. The calculations are done for resonant femtosecond excitation at the exciton resonance. The many‐body modifications of Rabi flopping and semiconductor photon echo are discussed for a thin medium, whereas the propagation of weak and strong pulses is analyzed for an extended material. Rabi flopping of the density can lead to field reamplification and thus to long propagation distances of sufficiently strong pulses and to pulse break‐up. The area theorem known from self‐induced transparency (SIT) in atomic systems is generalized for the case of phase modulated fields and shown to be modified significantly in semiconductors. Even though no ideal SIT occurs, the Coulomb interacting electron–hole system nevertheless seems to support extremely long propagation distances of so‐called π‐pulses.
The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.