Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review A

Theory of the semiconductor photon echo

Markus Lindberg, Rolf H. Binder, Stephan W. Koch

Published Feb 1, 1992• 212 citations
Publisher

Abstract

The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A continuous transition between free-induction decay and photon-echo signal is obtained with increasing excitation amplitude. A perturbative analytical analysis of the equations allows one to identify the role of the many-body effects in producing the different features.

DOI
10.1103/physreva.45.1865

Related papers

Photon echo in direct-gap semiconductors

Indrani Majumdar, Pranay K. Sen

Based upon the time dependent perturbation theory for coherent radiation-semiconductor interaction, the possibility of occurrence of the phenomenon of two-pulse photon echo has been investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal. The excitation intensity is chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit and the weakly bound Wannier-Mott excitonic structure of the crystal absorption edge is manifested. The band gap renormalization effect is also taken into account. Numerical estimation of the transmitted intensity has been made for electron-hole transition to the 1s excitonic states in the bulk CdS crystal. The analytical results demonstrate the occurrence of photon echo in direct-gap semiconductors.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Apr 28, 1999•0 citations

On the Theory of Femtosecond Photon Echoes from Band-to-Band Transitions in Semiconductors

V. L. Gurevich, Д. А. Паршин, Д. А. Паршин

A theory of femtosecond photon echo pulse decay in semiconductors is developed. The echo is due to band-to-band transitions produced by two successive pulses of coherent light. We propose that the decay is a result of the unscreened carrier-carrier interaction that brings about dephasing of the electron-hole wave function. We come to the conclusion that the time of dephasing is proportional to n -1/3 , where n is the carrier concentration.

Europhysics Letters (EPL)•Jun 15, 1990•22 citations

Many-body theory of Rabi flopping and photon echo in semiconductors

S. W. Koch, Rolf H. Binder, Markus Lindberg

The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.

Quantum Electronics and Laser Science Conference•May 12, 1991•1 citation

Theoretical study of resonant ultrashort-pulse propagation in semiconductors

A. Knorr, Rolf H. Binder, Markus Lindberg +1 more

Femtosecond-pulse propagation in resonantly excited semiconductors is investigated by numerically solving the semiconductor Maxwell-Bloch equations for plane waves. For excitation at the exciton resonance, it is shown that the pulse absorption exhibits a strongly nonlinear dependence on the input pulse area. Very long propagation distances for strong pulses are observed, but even when all dephasing processes have been neglected, no lossless propagation (self-induced transparency) was found. The influence of the electron-hole many-body effects, nonequilibrium carrier relaxation, and optical dephasing on the pulse-propagation dynamics is studied. The exchange interaction in the electron-hole plasma is shown to support large propagation distances. For excitation of the continuum states, the dependence of the absorption on the intensity of the input pulse is reduced due to the rapid carrier relaxation into quasiequilibrium distributions.

Physical Review A•Dec 1, 1992•66 citations

Photon echo and valence-band mixing in semiconductor quantum wells

Yiping Z. Hu, Rolf H. Binder, S. W. Koch

The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.

Physical review. B, Condensed matter•Jun 15, 1993•22 citations

Influence of Coulomb interaction on the photon echo in disordered semiconductors

D. Bennhardt, P. Thomas, A. Weller +2 more

The photon-echo signal in disordered semiconductors is treated including the electron-hole Coulomb attraction. The amplitude of the spontaneous photon echo is calculated up to third order in the external-field amplitude using the semiconductor Bloch equations. Several idealized situations are analyzed showing the significance of a critical correlation of the polarization dynamics in the two time intervals preceding and following the second excitation pulse. Strong photon-echo decay is predicted for short-range disorder without Coulomb interaction. The inclusion of electron-hole attraction leads to a stabilization of the echo signal. For the case of long-range disorder with Coulomb interaction, we predict slow decay in the diffusive limit.

Physical review. B, Condensed matter•Apr 15, 1991•32 citations
The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A continuous transition between free-induction decay and photon-echo signal is obtained with increasing excitation amplitude. A perturbative analytical analysis of the equations allows one to identify the role of the many-body effects in producing the different features.
Based upon the time dependent perturbation theory for coherent radiation-semiconductor interaction, the possibility of occurrence of the phenomenon of two-pulse photon echo has been investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal. The excitation intensity is chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit and the weakly bound Wannier-Mott excitonic structure of the crystal absorption edge is manifested. The band gap renormalization effect is also taken into account. Numerical estimation of the transmitted intensity has been made for electron-hole transition to the 1s excitonic states in the bulk CdS crystal. The analytical results demonstrate the occurrence of photon echo in direct-gap semiconductors.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
Femtosecond-pulse propagation in resonantly excited semiconductors is investigated by numerically solving the semiconductor Maxwell-Bloch equations for plane waves. For excitation at the exciton resonance, it is shown that the pulse absorption exhibits a strongly nonlinear dependence on the input pulse area. Very long propagation distances for strong pulses are observed, but even when all dephasing processes have been neglected, no lossless propagation (self-induced transparency) was found. The influence of the electron-hole many-body effects, nonequilibrium carrier relaxation, and optical dephasing on the pulse-propagation dynamics is studied. The exchange interaction in the electron-hole plasma is shown to support large propagation distances. For excitation of the continuum states, the dependence of the absorption on the intensity of the input pulse is reduced due to the rapid carrier relaxation into quasiequilibrium distributions.
The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.
The photon-echo signal in disordered semiconductors is treated including the electron-hole Coulomb attraction. The amplitude of the spontaneous photon echo is calculated up to third order in the external-field amplitude using the semiconductor Bloch equations. Several idealized situations are analyzed showing the significance of a critical correlation of the polarization dynamics in the two time intervals preceding and following the second excitation pulse. Strong photon-echo decay is predicted for short-range disorder without Coulomb interaction. The inclusion of electron-hole attraction leads to a stabilization of the echo signal. For the case of long-range disorder with Coulomb interaction, we predict slow decay in the diffusive limit.