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Physical review. B, Condensed matter

Photon echo and valence-band mixing in semiconductor quantum wells

Yiping Z. Hu, Rolf H. Binder, S. W. Koch

Published Jun 15, 1993• 22 citations
Publisher

Abstract

The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.

DOI
10.1103/physrevb.47.15679

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The coherent optical response of semiconductor quantum wells is studied theoretically using the multiband semiconductor Bloch equations which include coupling of the heavy- and light-hole bands as well as many-body Coulomb effects. For the case of a two-pulse excitation scheme it is shown how the different rotational symmetries of heavy- and light-hole bands induce a strong polarization dependence of the signal in the photon echo direction. The selection rules are based on the Kane-Luttinger theory while the transition amplitudes are obtained by numerically solving the multiband semiconductor Bloch equations. In addition, the influence of valence-band mixing effects on the optical Stark effect is demonstrated.
A theoretical study of the coherently coupled heavy-hole--light-hole optical Stark effect in semiconductor quantum wells is presented. Based on a detailed investigation of the various many-body contributions to the Stark shifts, we identify a parameter regime in which the existence of intervalence band coherences (analogous to the nonradiative Raman coherence in three-level atoms) can be inferred from the coherently coupled heavy-hole--light-hole excitonic optical Stark shift. The analysis is performed for the third-order nonlinear optical regime $({\ensuremath{\chi}}^{3}$ regime), and is based on the dynamics-controlled truncation (DCT) formalism. It includes the relevant optical selection rules, excitonic and two-exciton-correlation (e.g., biexcitonic) effects.
This dissertation addresses both fundamental aspects of Coulomb correlations in semiconductor quantum wells and more practical aspects of theoretical analysis of semiconductor optoelectronic devices. After introducing the subject, we present and evaluate a state-of-the-art theory of the third order coherent optical response of a semiconductor quantum well based on the Dynamics Controlled Truncation (DCT) scheme. Already in the third order (the so-called chi (3)) regime, semiconductors exhibit a number of many-body Coulomb correlation effects. Their manifestation in various multi-pulse experimental configurations, customarily used in ultrafast semiconductor spectroscopy, has been an important component of this thesis. Coherent optical effects in a semiconductor 3-band system based on the heavy-hole, light-hole and conduction bands were investigated. The quantum beats in the time-integrated differential transmission signal were analyzed and compared with experimental data obtained at the University of Iowa. Fundamental differences from corresponding quantum beats in atomic 3-level systems were found. Also, the analysis of experimental data (obtained at the University of Arizona) of the coupled heavy-hole-light-hole optical Stark shift revealed evidence of intervalence band coherences, an analog of Raman coherences in atomic 3-levels systems. A scheme for realization of electromagnetically-induced transparency (EIT) based on the interference of excitonic and biexcitonic coherences was proposed. Corresponding experiments performed at the University of Oregon showed indeed a considerable coherent reduction of excitonic absorption. Furthermore, an extension of the chi(3) analysis revealed an energy renormalization of the biexciton, in good agreement with the corresponding experiment. A microscopic analysis of polarization dynamics in time-resolved four-wave mixing signals was performed, revealing interesting implications for the biexciton dephasing in addition to the significance of many-body correlations. In the case of four-wave mixing in semiconductor microcavities, our theoretical analysis in conjunction with experimental data obtained at the University of Tokyo gave us indications for a significant shortcoming of the second Born approximation (2nd BA) applied to two-exciton Coulomb correlations in a thin semiconductor quantum well, in agreement with the general knowledge of the qualitative failure of the 2nd BA in systems with short-range interaction in two dimensions. We also analyzed a novel all-optical switching technique based on the nonlinear polarization rotation. Apart from identifying the many-particle processes relevant for the switch operation in the chi(3) regime, we proposed ways to further optimize the switch.
We have studied optical nutation and Stark splitting in a GaAs/AlGaAs quantum well with multi valence band structure using effective semiconductor Bloch equations. The individual roles of light and heavy holes in optical nutation have been examined. The analysis shows that both Rabi oscillation frequency and Stark splitting increase with rising electric field strength as observed experimentally. Also it is seen that light hole species dominates over heavy hole species in the transmission characteristics of quantum wells.
The availability of femtosecond pulses in the optical-frequency regime allows the study of coherent effects in the interaction between semiconductors and light. Because the properties of the exciting pulses become important ingredients in spectroscopy, the theoretical analysis must treat the complete time dependence of the system. For this purpose we use the semiconductor Bloch equations (SBE),1-3 which are the coupled equations of motion for the interband polarization and the electron and hole populations for an interacting electron-hole system in the random-phase approximation. The equations describe the electron-hole Coulomb attraction leading to excitonic features; they contain phasespace filling and band-gap renormalization effects, as well as the dipole interaction with the applied light field.
The semiconductor Bloch equations are solved numerically for a two-pulse photon-echo configuration. The time-dependent diffracted signal is computed and the significance of many-body effects, carrier relaxation, and dephasing is investigated in detail. Assuming femtosecond-pulse excitation at various intensities and frequencies, distinctly different results are obtained if the exciton or the continuum electron-hole-pair states are excited. It is shown that pure exciton excitation produces a free-induction decay signal and no photon echo. An echo signal is obtained only if continuum states are excited either directly by choosing the central pulse frequencies appropriately or if the band-gap renormalization is sufficiently strong to shift continuum states into resonance. A continuous transition between free-induction decay and photon-echo signal is obtained with increasing excitation amplitude. A perturbative analytical analysis of the equations allows one to identify the role of the many-body effects in producing the different features.
The effect of an external magnetic field on optical coherent transient phenomena has been analyzed for semiconductor quantum well structures (QWS). The Lüttinger Hamiltonian is used to incorporate the complex valence band structure which is modified due to the application of the magnetic field. We have considered a GaAs/AlGaAs QWS with magnetic field applied in the direction perpendicular to the plane of the well. We get two quantum levels due to confinement, and doubly degenerate heavy-hole and light-hole bands corresponding to each quantum level, thus leading to eight hole subbands. This results in an 8×8 Hamiltonian in an appropriately chosen basis. Energy eigenvalues and eigenvectors have been calculated by numerically diagonalizing the above Hamiltonian. The absorption characteristics and the optical coherent transient phenomena have been studied by solving the effective semiconductor Bloch equations in the weak excitation regime. The polarization induced in conjunction with the results obtained by solving the modified Lüttinger Hamiltonian has been used to analyze the transient characteristics. We observe a blueshift in transition energy with an increase in magnetic field. The features are changed dramatically when one includes band mixing. The crossing of subbands in the absence of band-mixing effects changes over to anticrossing behavior when band mixing is included. Multiple oscillations are observed in the optical nutation signal that can be attributed to band-mixing effects. Absorption spectra also show a significant blueshift with an increase in magnetic field and additional peaks appear when band mixing is included.