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IEEE Transactions on Applied Superconductivity

Three-terminal Josephson device with direct bias-current controlled phase difference

Ivan P. Nevirkovets, Mark G. Blamire, Jan E. Evetts

Published Jun 1, 1995• 6 citations
Publisher

Abstract

We have fabricated and characterized the Nb/Al-AlO/sub x/-Nb/Al-AlO/sub x/-Nb three-terminal double junction Josephson device in which the phase difference across the whole device is controlled by the tunnel current flowing through one of the junctions. The device reveals current gain about 10 and has good isolation of the input and output circuits.>

DOI
10.1109/77.403249

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•Mar 1, 1989•0 citations
We have fabricated and characterized the Nb/Al-AlO/sub x/-Nb/Al-AlO/sub x/-Nb three-terminal double junction Josephson device in which the phase difference across the whole device is controlled by the tunnel current flowing through one of the junctions. The device reveals current gain about 10 and has good isolation of the input and output circuits.>
Nb/Al–AlOx–Nb/Al–AlOx–Nb double-barrier three-terminal Josephson devices with a thin middle Nb/Al bilayer, which have potential for use as switching and amplifying elements in superconducting electronics, have been investigated in the stationary state by means of low-temperature scanning electron microscopy. For the devices with lateral sizes comparable with the effective Josephson penetration depth, we observed nearly homogeneous current distribution over the region common to the top and bottom junctions when the devices were biased across both the barriers in the absence of an external magnetic field. When the two junctions are biased separately, the current is concentrated at the junction edges in accordance with the behavior characteristic of distributed junctions. In an applied magnetic field, the vortex structure is confined to the area shared by both junctions when the device is biased as a whole. The experiment gives an indication that in the stationary state the spatial phase difference distribution of the two junctions coincides in the shared region at least in some interval of the external magnetic field.
We present Nb/AlOx/Nb–Al/AlOx/Nb stacked Josephson junctions which we propose as three-terminal elements to control the quantum behavior of Josephson complex systems. A bias current can be independently injected in the “top” junction, providing a fine control of the critical current of the “bottom” junction. The reported characterization of the device refers to data in the classical limit including measurements of the switching dynamics between metastable states of the system at different temperatures and bias conditions. At low temperature, the effective dissipation of the bottom junction remains substantially unchanged when different injection currents flow in the top junction. These results are interesting to project new configurations of macroscopic quantum experiments.
In an effort to determine the suitability of Josephson junctions for applications in quantum computation, we measured low-noise dc current-voltage characteristics of Nb/AlO/sub x//Nb and Al/AlO/sub x//Al junctions in the temperature range from 90 mK to 1 K. Nb-based samples were obtained from several different facilities with critical currents of a few /spl mu/A and critical current densities between 100 and 3000 A/cm/sup 2/. We fabricated the Al-based samples using double-angle evaporation and obtained critical currents of a few /spl mu/A with critical current densities of about 30 A/cm/sup 2/. We found that the sub-gap leakage current in the Nb-based samples does not depend on temperature in the range 90 mK to 1 K, whereas that for the Al-based samples follows the expected BCS behavior to about 150 mK. Our Al-based samples have a lower level of dissipation than Nb-based devices; however, both Al- and Nb-based samples achieved dissipation levels sufficiently low for some quantum computing applications.
A versatile current-switched gate is described which consists of two Josephson tunnel junctions and a small resistor in a loop. The directly combined bias and control currents flow through one junction in the zero-voltage state, causing the switching. The second junction and the resistor provide isolation between input and output after switching. The switching speed of a few tens of picoseconds and the microwatt power dissipation are comparable to those of other present designs. The design is particularly simple, compact, and easy to fabricate.
We report experimental results on characteristics of SFIFS junctions and multiterminal SFIFSIS and SISFIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS (SFIS) junctions serve as injectors in the SFIFSIS (SISFIS) devices, which have transistorlike properties; for this reason, we call them superconducting-ferromagnetic transistors. We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic becomes linear. For three-terminal SFIFSIS devices, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For four-terminal SISFIS devices, we studied dependence of the transport current through the middle Nb electrode on injection current level through the SFIS junction. In both cases, we found that the output superconducting current (either Josephson or transport) can be efficiently modulated by the quasiparticle injection from SFIFS or SFIS input junction. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.
Characteristics of Nb/NbOx/Al injection controlled planar three terminal superconducting devices (injection controlled links) have been studied experimentally. A built-in Nb/AlOx/Nb Josephson junction is used to perform direct tunneling measurement, whose results show that the gap in the Nb strip decreases according as its critical current is suppressed. It is also shown that the static characteristics of the devices with high and low injector resistance can be fitted to a simple heating model and a modified heating model respectively.