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Applied Physics Letters

Stacked Josephson junctions in view of macroscopic quantum experiments

C. Granata, Valentina Corato, A. Monaco, B. Ruggiero, M. Russo, P. Silvestrini

Published Aug 20, 2001• 22 citations
Publisher

Abstract

We present Nb/AlOx/Nb–Al/AlOx/Nb stacked Josephson junctions which we propose as three-terminal elements to control the quantum behavior of Josephson complex systems. A bias current can be independently injected in the “top” junction, providing a fine control of the critical current of the “bottom” junction. The reported characterization of the device refers to data in the classical limit including measurements of the switching dynamics between metastable states of the system at different temperatures and bias conditions. At low temperature, the effective dissipation of the bottom junction remains substantially unchanged when different injection currents flow in the top junction. These results are interesting to project new configurations of macroscopic quantum experiments.

DOI
10.1063/1.1391238

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We present Nb/AlOx/Nb–Al/AlOx/Nb stacked Josephson junctions which we propose as three-terminal elements to control the quantum behavior of Josephson complex systems. A bias current can be independently injected in the “top” junction, providing a fine control of the critical current of the “bottom” junction. The reported characterization of the device refers to data in the classical limit including measurements of the switching dynamics between metastable states of the system at different temperatures and bias conditions. At low temperature, the effective dissipation of the bottom junction remains substantially unchanged when different injection currents flow in the top junction. These results are interesting to project new configurations of macroscopic quantum experiments.
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We report experiments on energy level quantization in Nb/AlOx/Nb Josephson junctions while measurements on SQUIDs are in progress. Data on the presence of energy level quantization are shown at temperatures above the classical-quantum regime crossover temperature. This has been possible by extending the measurements of the rate of the escape from the zero-voltage state at higher sweep bias rate in order to induce non-stationary conditions in the energy potential describing the junction dynamics. Data are compatible with extremely low "effective" dissipation in our system. Theoretical predictions on quantum effects related to the presence of non-stationary conditions in the potential associated to a rf SQUID are reported in view of new possible experiments.
Measurements of temperature dependence of the return current in high quality Nb/AlOx/Nb Josephson junctions are presented. From the experimental data, we obtain the effective resistance, i.e., the effective dissipation, for the retrapping process, according to the generalized resistively shunted junction model proposed by Chen, Fisher, and Leggett. We present a careful analysis, based on a comparison between the measured temperature dependencies of both the return and the quasiparticle tunneling current. We find that the junction subgap conductance, which includes the quasiparticle and the quasiparticle-pair interference terms, is responsible for the return process. The measurements have been performed on various samples, in a wide range of critical current densities from 50 to 2250 A/cm2, covering different damping regimes and spanning over the high and low temperature limits. Junctions with low critical current density show ideal dissipation which makes the return current scale with temperature according to the BCS exponential behavior without flattening out effects. This result may be relevant for the possible use of Nb/AlOx/Nb junctions in macroscopic quantum coherence experiments, which strongly require a very low dissipation.
We have developed a scheme for high resolution measurements of the switching current distribution of a current-biased Josephson tunnel junction using a timing technique. In the measurement setup digital control and read-out electronics are galvanically isolated from the analog sample bias electronics by an optical fiber link. We have successfully used this technique to investigate thermal activation and macroscopic quantum tunneling of the phase in a high-quality 5×5 μm2 Nb–Al/AlOx–Nb Josephson tunnel junction with a critical current of Ic≈325 μA. At temperatures above the cross over temperature of T★≈280 mK the escape is dominated by thermal activation. Due to the high quality factor of the junction (Q≈95), the escape temperature is noticeably affected by the thermal prefactor. At temperatures below T★, the value of which agrees well with the theoretical predictions, the escape of the phase by quantum mechanical tunneling is observed. The presented technique can be employed to characterize current-biased Josephson tunnel junctions for applications in quantum information processing.
We have carried out systematic Macroscopic Quantum Tunneling (MQT) experiments on Nb/Al-AlO_x/Nb Josephson junctions (JJs) of different areas. Employing on-chip lumped element inductors, we have decoupled the JJs from their environmental line impedances at the frequencies relevant for MQT. This allowed us to study the crossover from the thermal to the quantum regime in the low damping limit. A clear reduction of the crossover temperature with increasing JJ size is observed and found to be in excellent agreement with theory. All junctions were realized on the same chip and were thoroughly characterized before the quantum measurements.