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The European Physical Journal D

Optical solitons in semiconductor quantum dot waveguides

Guram T. Adamashvili, A. Knorr, C. Weber

Published Mar 11, 2008• 11 citations
Publisher

Abstract

A theory of self-induced transparency for a TM-mode propagating in a planar semiconductor waveguide sandwiched between two dielectric media is developed. A transition layer between the waveguide and one of the connected media is described using a model of a two-dimensional sheet of quantum dots. Explicit analytical expressions for the optical soliton in the presence of single-excitonic and biexcitonic transitions are obtained with realistic parameters which can be reached in current experiments.

DOI
10.1140/epjd/e2008-00042-2

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A theory of self-induced transparency for a TM-mode propagating in a planar semiconductor waveguide sandwiched between two dielectric media is developed. A transition layer between the waveguide and one of the connected media is described using a model of a two-dimensional sheet of quantum dots. Explicit analytical expressions for the optical soliton in the presence of single-excitonic and biexcitonic transitions are obtained with realistic parameters which can be reached in current experiments.
A general theory of optical resonance solitons and breathers in the presence of single-excitonic and biexcitonic transitions in an ensemble of inhomogeneously broadened semiconductor quantum dots is constructed. Optical plane wave solitons ($2\ensuremath{\pi}$ pulses) are formed in stacked layer structures (many-layered systems) of semiconductor quantum dots. Optical small-amplitude bright breathers ($0\ensuremath{\pi}$ pulses) in semiconductor quantum dot waveguides are considered. Explicit analytical expressions for the shape and parameters of the solitons and breathers in the regime of self-induced transparency are obtained as well as simulations of the space-time dynamics of two-dimensional breathers presented with realistic parameters which can be reached in current experiments. It is shown that, unlike for plane wave breathers, the parameters additionally depend on the waveguide mode. In the special case of plane wave breathers in semiconductor quantum dots, known analytical results are recovered.
Considering the exciton-biexciton coherence, we analytically study the linear absorption and nonlinear propagation properties of the probe and signal field in a semiconductor quantum dot. It is found that in the linear case, in the system takes place an electromagnetically induced transparency phenomenon. Furthermore, we obtain that in the system there occurs one- or two-transparency window, or optical gain, which is controlled by adjusting the coupling control field. For the nonlinear case, the weak probe field, which is induced by a signal field, splits into two parts. When their excited self-Kerr and cross-Kerr nonlinear effects balance the refractive effect of the beam, the system exhibits bright-bright, bright-dark, dark-bright, dark-dark soliton pairs.
The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.