Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physics of Wave Phenomena

Investigation of relaxation in quantum dot ensembles in thin semiconductor films by photon-echo technique

I. I. Popov, Н. С. Вашурин, Путилин Сергей Эдуардович, S. A. Stepanov, Николай Иванович Сушенцов

Published Apr 1, 2015• 3 citations
Publisher

Abstract

Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.

DOI
10.3103/s1541308x1502003x

Related papers

Long–lived femtosecond photon echo in thin films on localized exciton states at room temperature

Н. С. Вашурин, V. O. Kompanets, I.I. Popov +2 more

Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.

EPJ Web of Conferences•Jan 1, 2017•0 citations

Principles of Photon Echo Formation on Special Exciton States in Thin Textured Films at Room Temperature

I. I. Popov, A. U. Bakhodurov, Н. С. Вашурин +5 more

Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.

Bulletin of the Russian Academy of Sciences Physics•Dec 1, 2018•2 citations

Signals of the femtosecond photon echo in inorganic films and their recording

I. I. Popov, Н. С. Вашурин, Путилин Сергей Эдуардович +3 more

We report the results of the first experiment on recording of photon echo and self-diffraction signals in a zinc oxide semiconductor film of nanoscale thickness, which are excited by two-photon absorption of femtosecond laser pulses with wavelengths of 800 to 840nm for the exciton transition at room temperature.

Physics of Wave Phenomena•Jan 1, 2013•3 citations

Photon Echo on Excitons and Its Role in the Development of Nanoelectronic Devices Based on Quantum-Sized Structures in Thin Zinc Oxide Films

I. I. Popov, Roman V. Yusupov, A. V. Petrov +3 more

Abstract The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering were studied. Echo signals are excited at a wavelength of 800 nm by transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures by two-photon absorption mode of laser pulses with a wavelength of 800 nm.

Bulletin of the Russian Academy of Sciences Physics•Feb 1, 2024•0 citations

Photon echo on excitons for the development of nanoelectronic devices based on a quantum-size structures in a thin zinc oxide films

I. I. Popov, Roman V. Yusupov, A. V. Petrov +3 more

The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering have been studied. Echo signals are excited at a wavelength of 800 nm at transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures in the two-photon absorption mode of laser pulses with a wavelength of 800 nm.

Известия Российской академии наук Серия физическая•Feb 15, 2024•0 citations

Photon echoes in single- and trilayer semiconductor films of different nanosized thicknesses and their properties

I. I. Popov, Н. С. Вашурин, Путилин Сергей Эдуардович +3 more

A femtosecond stimulated photon echo is detected for the first time in thin semiconductor films with thicknesses of 100, 800, and 2400 nm. It is established that relaxation time T 1 varies with ZnO film thickness, taking values of 0.96, 2.96, and 4.312 ps at thicknesses of 2400, 800, and 100 nm, respectively. For ZnO/Si+/Si− trilayer films, the relaxation time is T 1 = 12.73 ps.

Bulletin of the Russian Academy of Sciences Physics•Feb 1, 2014•6 citations
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.
Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.
Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.