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Bulletin of the Russian Academy of Sciences Physics

Principles of Photon Echo Formation on Special Exciton States in Thin Textured Films at Room Temperature

I. I. Popov, A. U. Bakhodurov, Н. С. Вашурин, V. O. Kompanets, A. N. Musanov, Д. А. Никитин, Sergey V. Chekalin, R. V. Belyaev

Published Dec 1, 2018• 2 citations
Publisher

Abstract

Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.

DOI
10.3103/s1062873818120171

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Bulletin of the Russian Academy of Sciences Physics•Dec 1, 2018•3 citations
Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.
The results of the study of the polarization properties of the stimulated photon echo (SPE) excited at room temperature on free excitons and exciton states localized on surface defects of textured thin films are reported. The results of observation and investigation of the effect of the non-Faraday rotation of a femtosecond SPE in a textured thin film are presented. The physical processes occurring under the Faraday effect and the effect of the non-Faraday rotation of the photon echo (PE) polarization plane are compared.
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.
Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.