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Bulletin of the Russian Academy of Sciences Physics

Innovation Potential of the Non-Faraday Polarization Twisting of Photon Echoes on Special Exciton States in Thin Textured Films

A. U. Bakhodurov, Н. С. Вашурин, Evgeny A. Vinogradov, V. O. Kompanets, A. N. Musanov, Д. А. Никитин, I. I. Popov, Sergey V. Chekalin

Published Dec 1, 2018• 3 citations
Publisher

Abstract

Abstract The advantages of thin textured films over other resonant media that allow detection of the effect produced by the non-Faraday polarization twisting of photon echoes at room temperature are demonstrated. The possibility is discussed of using this effect to record record-short femtosecond time intervals, and for optical processors operating with quaternion algebra in order to effectively solve navigation problems in both aviation and medicine.

DOI
10.3103/s1062873818120043

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EPJ Web of Conferences•Jan 1, 2017•0 citations
Abstract The advantages of thin textured films over other resonant media that allow detection of the effect produced by the non-Faraday polarization twisting of photon echoes at room temperature are demonstrated. The possibility is discussed of using this effect to record record-short femtosecond time intervals, and for optical processors operating with quaternion algebra in order to effectively solve navigation problems in both aviation and medicine.
The results of the study of the polarization properties of the stimulated photon echo (SPE) excited at room temperature on free excitons and exciton states localized on surface defects of textured thin films are reported. The results of observation and investigation of the effect of the non-Faraday rotation of a femtosecond SPE in a textured thin film are presented. The physical processes occurring under the Faraday effect and the effect of the non-Faraday rotation of the photon echo (PE) polarization plane are compared.
Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.
It is reported about the first experiments on the registration of a femtosecond time interval using the effect of non-Faraday rotation of the plane polarization of the stimulated photon echo. The experiment was performed at room temperature in a three-layer semiconductor film thickness of 300 nm, obtained by magnetron sputtering. The fundamental difference of this effect from the Faraday’s effect was shown. We give conclusions about the possibility of femtosecond time intervals registration at room temperature with an accuracy of 25 fs in the polarization principle of action, rather than spectral.
This paper reflects the results of the research on the character of the dependence of the non-Faraday rotation of the femtosecond stimulated photon echo polarization plane on the time interval between the second and third exciting pulses, discretely varying from 180 to 900 fs in increments 180 fs. The time interval between the first and second pulses was equal to zero. The echo signal was formed at room temperature on exciton states localized on the surface defects of a thin three-layer textured ZnO/Si(P)/Si(B) film in the presence of a homogeneous magnetic field of 0.25 mT applied longitudinally to the optical excitation axis. The qualitative coincidence of the investigated dependence with the theoretical prediction of the investigated effect for gaseous medium is shown.
Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.