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Bulletin of the Russian Academy of Sciences Physics

Femtosecond magnito-optics based on photon echoes

I. I. Popov, Н. С. Вашурин, Путилин Сергей Эдуардович, A. U. Bakhodurov

Published May 1, 2017• 5 citations
Publisher

Abstract

A textured three-layer ZnO/Si(P)/Si(B) film in an uniform longitudinal magnetic field with a stregth of 0.4 T exhibits the effect of the polarization plane’s rotation from a stimulated photon echo signal formed at room temperature on the exciton states. At time interval τ 12 set to zero and time interval τ 23 = 720 and 900 fs, the angles of rotation are 27° and 19°, respectively.

DOI
10.3103/s1062873817050161

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Bulletin of the Russian Academy of Sciences Physics•Dec 1, 2018•3 citations
A textured three-layer ZnO/Si(P)/Si(B) film in an uniform longitudinal magnetic field with a stregth of 0.4 T exhibits the effect of the polarization plane’s rotation from a stimulated photon echo signal formed at room temperature on the exciton states. At time interval τ 12 set to zero and time interval τ 23 = 720 and 900 fs, the angles of rotation are 27° and 19°, respectively.
Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.
This paper reflects the results of the research on the character of the dependence of the non-Faraday rotation of the femtosecond stimulated photon echo polarization plane on the time interval between the second and third exciting pulses, discretely varying from 180 to 900 fs in increments 180 fs. The time interval between the first and second pulses was equal to zero. The echo signal was formed at room temperature on exciton states localized on the surface defects of a thin three-layer textured ZnO/Si(P)/Si(B) film in the presence of a homogeneous magnetic field of 0.25 mT applied longitudinally to the optical excitation axis. The qualitative coincidence of the investigated dependence with the theoretical prediction of the investigated effect for gaseous medium is shown.
Periodic modulation of the decay of a stimulated photon echo (SPE), formed in a three-layer textured thin ZnO/Si (P)/Si(B) film with a longitudinal uniform magnetic field upon increasing the time interval between the exciting pulses, is recorded in experiments. The shape of the modulated SPE decay curve changes for different values of time interval between the first two exciting pulses. The g -factor of the quantum transition is estimated from the period of modulation. The value of the g -factor is used to reach a conclusion on the formation of photon echoes on localized complex exciton states of the trion type.
The results of the study of the polarization properties of the stimulated photon echo (SPE) excited at room temperature on free excitons and exciton states localized on surface defects of textured thin films are reported. The results of observation and investigation of the effect of the non-Faraday rotation of a femtosecond SPE in a textured thin film are presented. The physical processes occurring under the Faraday effect and the effect of the non-Faraday rotation of the photon echo (PE) polarization plane are compared.
It is reported about the first experiments on the registration of a femtosecond time interval using the effect of non-Faraday rotation of the plane polarization of the stimulated photon echo. The experiment was performed at room temperature in a three-layer semiconductor film thickness of 300 nm, obtained by magnetron sputtering. The fundamental difference of this effect from the Faraday’s effect was shown. We give conclusions about the possibility of femtosecond time intervals registration at room temperature with an accuracy of 25 fs in the polarization principle of action, rather than spectral.