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Известия Российской академии наук Серия физическая

Photon echo on excitons for the development of nanoelectronic devices based on a quantum-size structures in a thin zinc oxide films

I. I. Popov, Roman V. Yusupov, A. V. Petrov, A. R. Bessonov, A. M. Gaia, A. V. Moroz

Published Feb 15, 2024• 0 citations
Publisher

Abstract

The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering have been studied. Echo signals are excited at a wavelength of 800 nm at transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures in the two-photon absorption mode of laser pulses with a wavelength of 800 nm.

DOI
10.31857/s0367676524020185

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•Jan 1, 2013•0 citations
The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering have been studied. Echo signals are excited at a wavelength of 800 nm at transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures in the two-photon absorption mode of laser pulses with a wavelength of 800 nm.
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.
This work reports on the experiments on the two-photon excitation of a primary photon echo femtosecond signal in a zinc oxide semiconductor film of nanoscale (100, 600, and 800 nm) thickness at the quantum transition (corresponding to 400 nm) at room temperature. The photon echo was observed on free excitons. The echo signal partially weakened due to the scattering on the optical phonons was recorded at a wavelength of 800–840 nm. The nano-optical effect of the reduction of the environment irreversible transverse relaxation time ( T 2) with the decrease of the film thickness was detected. The established fact is connected, firstly, with the structural characteristics of the films under study and, secondly, with the decrease in the intensity of the longitudinal interactions between the excited particles along with the reduction of the film thickness.
Abstract A way of obtaining new thin-film materials for forming photon echoes at room temperature on special exciton states in thin textured films obtained via magnetron sputtering is proposed, along with a model that explains the properties of new states and is associated with the formation of special exciton states. The dependence of the relaxation times of resonant transitions on the size of nanoscale clusters of surface defects is investigated for different film thicknesses and various semiconductor materials. Prospects for using such materials in medical technology are determined.