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Bulletin of the Russian Academy of Sciences Physics

Photon echoes in single- and trilayer semiconductor films of different nanosized thicknesses and their properties

I. I. Popov, Н. С. Вашурин, Путилин Сергей Эдуардович, S. A. Stepanov, Сидорова Вера Тагировна, Николай Иванович Сушенцов

Published Feb 1, 2014• 6 citations
Publisher

Abstract

A femtosecond stimulated photon echo is detected for the first time in thin semiconductor films with thicknesses of 100, 800, and 2400 nm. It is established that relaxation time T 1 varies with ZnO film thickness, taking values of 0.96, 2.96, and 4.312 ps at thicknesses of 2400, 800, and 100 nm, respectively. For ZnO/Si+/Si− trilayer films, the relaxation time is T 1 = 12.73 ps.

DOI
10.3103/s106287381402018x

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Bulletin of the Russian Academy of Sciences Physics•May 1, 2017•5 citations
A femtosecond stimulated photon echo is detected for the first time in thin semiconductor films with thicknesses of 100, 800, and 2400 nm. It is established that relaxation time T 1 varies with ZnO film thickness, taking values of 0.96, 2.96, and 4.312 ps at thicknesses of 2400, 800, and 100 nm, respectively. For ZnO/Si+/Si− trilayer films, the relaxation time is T 1 = 12.73 ps.
Long–lived femtosecond photon echo was excited at room temperature in a two–photon regime on the charged exciton states (trion type) localized on the surface defects of a three–layer textured ZnO/Si(B)/Si(P) film with the thickness of each layer at 100 nm in a longitudinal uniform magnetic field. The irreversible longitudinal relaxation time T1 for the long–lived photon echo regime was of the order of 40 ps, whereas when measured with the help of the stimulated photon echo generated in the single–photon mode, the value was found not to exceed 600 fs.
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.
Periodic modulation of the decay of a stimulated photon echo (SPE), formed in a three-layer textured thin ZnO/Si (P)/Si(B) film with a longitudinal uniform magnetic field upon increasing the time interval between the exciting pulses, is recorded in experiments. The shape of the modulated SPE decay curve changes for different values of time interval between the first two exciting pulses. The g -factor of the quantum transition is estimated from the period of modulation. The value of the g -factor is used to reach a conclusion on the formation of photon echoes on localized complex exciton states of the trion type.
This work reports on the experiments on the two-photon excitation of a primary photon echo femtosecond signal in a zinc oxide semiconductor film of nanoscale (100, 600, and 800 nm) thickness at the quantum transition (corresponding to 400 nm) at room temperature. The photon echo was observed on free excitons. The echo signal partially weakened due to the scattering on the optical phonons was recorded at a wavelength of 800–840 nm. The nano-optical effect of the reduction of the environment irreversible transverse relaxation time ( T 2) with the decrease of the film thickness was detected. The established fact is connected, firstly, with the structural characteristics of the films under study and, secondly, with the decrease in the intensity of the longitudinal interactions between the excited particles along with the reduction of the film thickness.
This paper reflects the results of the research on the character of the dependence of the non-Faraday rotation of the femtosecond stimulated photon echo polarization plane on the time interval between the second and third exciting pulses, discretely varying from 180 to 900 fs in increments 180 fs. The time interval between the first and second pulses was equal to zero. The echo signal was formed at room temperature on exciton states localized on the surface defects of a thin three-layer textured ZnO/Si(P)/Si(B) film in the presence of a homogeneous magnetic field of 0.25 mT applied longitudinally to the optical excitation axis. The qualitative coincidence of the investigated dependence with the theoretical prediction of the investigated effect for gaseous medium is shown.