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IEEE Journal of Quantum Electronics

Proposal on the suppression of optical absorption by quantum interference via parallel-perpendicular kinetic energy coupling effect

Kyoung-Youm Kim, Byoungho Lee

Published Apr 1, 2001• 4 citations
Publisher

Abstract

We propose a scheme for suppressing optical absorption in a coupled asymmetric quantum-well (QW) structure via the parallel-perpendicular energy coupling effect. A specific QW structure is suggested and the feasibility of our scheme is proved with the calculation of wavefunctions and absorption coefficients.
DOI
10.1109/3.914404

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We propose a modulation scheme of optical absorption in a coupled asymmetric quantum well (QW) structure via electrically controllable quantum interference. It is based on the parallel-perpendicular energy coupling effect. We show that by applying an external electric Held in the parallel direction (to the QW layers), we can obtain a maximum (peak-type) absorption at a specific wavelength where absorption cancellation would occur due to electrically induced transparency without such an external Held .
We propose a modulation scheme of optical absorption in a coupled asymmetric quantum well (QW) structure via electrically controllable quantum interference. It is based on the parallel-perpendicular energy coupling effect. We show that by applying an external electric Held in the parallel direction (to the QW layers), we can obtain a maximum (peak-type) absorption at a specific wavelength where absorption cancellation would occur due to electrically induced transparency without such an external Held .
Summary form only given. Quantum interferences (especially destructive interferences) have been a subject of active study over the last decade. Some of examples using these interferences include electromagnetically induced transparency (EIT). Lasers without inversion (LWI), and highly efficient schemes for nonlinear optics. In a practical point of view, the implementation of such interferences in semiconductor devices is very interesting since we cannot control critical parameters in atomic systems. In this report, we suggest a structure in which we can change the phase difference between two intersubband transition matrix elements from 0/spl deg/ to 180/spl deg/ by the external perturbation or variables. We use the interferences between |0>-|2> and |0>-|3> transitions, where |2> and |3> states are broadened by tunneling into the same energy continuum through a thin potential barrier. By controlling the parallel kinetic energy of electrons, we can change the phase difference between them parallel-perpendicular kinetic energy coupling effects which modify the effective potential profiles of the structure. This means we can modulate optical absorption by controlling the sign of quantum interference via the parallel kinetic energy of electrons.
A new quantum interference phenomenon in optical absorption is reported. This effect manifests itself in a striking suppression of the absorption coefficient as a function of the electric field concomitant with a negligible Stark shift of the transition in suitably designed coupled-quantum-well semiconductors. This phenomenon, which does not arise from a reduced overlap of the final and initial states of the transition, is shown to be caused by quantum interference between two spatially separated transitions. The basic and general nature of this mechanism could be exploited in other artificially structured materials as well.
We propose and analyze an efficient scheme for suppressing the absorption of a weak probe field based on intersubband transitions in a four-level asymmetric coupled-quantum well (CQW) driven coherently by a probe laser field and a control laser field. By using the numerical simulation, we find that the magnitude of the transient absorption of the probe field is smaller than the three-level system based on the electromagnetically induced transparency (EIT) at line center of the probe transition, moreover, comparing with the scheme in three-level asymmetric double QW system, the transparency hole of the present work is much broader. By analyzing the steady-state process analytically and numerically, our results show that the probe absorption can be completely eliminated under the condition of Raman resonance (i.e. two-photon detuning is zero). Besides, we can observe one transparency window without requiring one- or two-photon detuning exactly vanish. This investigation may provide the possible scheme for EIT in solids by using CQW.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.