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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

2.5 THz multipixel heterodyne receiver based on NbN HEB mixers

Serguei Cherednichenko, Vladimir Drakinskiy, Jean Baubert, B. Lecomte, Frédéric Dauplay, Jean-Michel Krieg, Y. Delorme, A. Féret, H.-W. Hübers, A. D. Semenov, G. N. Gol'Tsman

Published Jun 14, 2006• 8 citations
Publisher

Abstract

A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.

DOI
10.1117/12.672746

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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membrandes (e.g. silicon-on-insulator) is under investigation.
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5m thick Si3N4/ SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. We present here the results of the antenna simulations using HFSS and ADS, as well as the beam calculations after the collimating mirror.
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 mum thick Si3N4/ SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. We present here the results of the antenna simulations using HFSS and ADS, as well as the beam calculations after the collimating mirror.
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
Superconducting Hot Electron Bolometer mixers offer the highest sensitivity for heterodyne detections at frequencies above 1 THz. Important efforts have been made these recent years to further increase the HEB mixers' sensitivity and working frequency and also to design multi-pixel configuration. We present in this paper the developments of a non-standard quasi-optical membrane based HEB mixer where the commonly used focusing element, the silicon lens, is replaced by a micro-mirror and a membrane-based back-short. This configuration offers many advantages: easier processing for circuits at very high frequencies, better noise temperature brought by lower RF coupling loss and higher gain of the antenna. This design is also considered very attractive for multi-pixel receivers. The devices are made of phonon-cooled NbN HEB mixers processed on 1.4 μm thick stress-less Si3N4/Si02 membrane. Quasi-optical designs have been made for frequencies at 600 GHz and 2.5 THz. The design and the device fabrication process will be discussed and both DC and RF measurements at 600 GHz will be presented.
Experimental work on the development of a quasi-optical heterodyne receiver for the THz frequency range is reported. The mixing device is a superconducting hot electron bolometer (HEB) made from ultrathin, d = 3 - 5 nm, niobium nitride (NbN) films. Work described in this thesis comprises: The design of a prototype receiver using quasi-optical coupling. Device fabrication involving reactive magnetron sputtering of NbN films and lithographic definition of the antenna integrated mixer. An investigation of the receiver performance at frequencies between 0.6 THz and 2.5 THz. The best performance is obtained with HEB mixers made from NbN films with a thickness d = 3-3.5 nm and a critical temperature T c = 9 - 9.5 K. Double-side band receiver noise temperatures are 530 K at 0.6 THz, 650 K at 1.6 THz and 1100 K at 2.5 THz. Corrected for losses in the receiver input optics, these values amount to only 10 times the theoretical quantum limit. MgO as the substrate material has been shown to provide improved acoustic coupling between NbN film and the substrate compared to other materials such as Si or sapphire. A maximum IF gain bandwidth of 4.5 GHz has been measured under the same operating conditions which yield lowest noise temperature. The local oscilltor power requirement is ~250 nW absorbed in the bolometer. Quasi-optically coupled HEB mixers have become the device-of-choice for radio astronomical applications in the frequency regime at and above 1 THz.