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Microwave and Optical Technology Letters

Bistability of a complex‐coupled DFB laser with TM‐mode injection

Chao‐Xiang Shi

Published Oct 20, 1995• 0 citations
Publisher

Abstract

Abstract We propose a novel method to produce optical bistability by using a complex‐coupled DFB (CC‐DFB) laser with TM‐mode injection. Because the CC‐DFB laser has good, dynamically stable operation, our proposed method is advantageous in high‐speed switching for signal processing. Polarization optical bistabilities are detailed using coupled‐mode equations and rate equations for the CC‐DFB lasers considering longitudinal hole burning and carrier‐dependent complex‐coupling coefficients. Many parameters reflecting the physical features of a complex‐coupled DFB laser are discussed. It is shown that for a CC‐DFB laser the polarization bistability induced by TM‐mode injection is much stronger for the antiphase of complex coupling than for the in phase. For the antiphase case the bistability becomes stronger if the complex‐coupled DFB laser structure is close to a pure gain grating DFB laser. © 1995 John Wiley & Sons, Inc.

DOI
10.1002/mop.4650100312

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Journal of the Institute of Electronics Engineers of Korea•Jan 1, 2002•0 citations
Abstract We propose a novel method to produce optical bistability by using a complex‐coupled DFB (CC‐DFB) laser with TM‐mode injection. Because the CC‐DFB laser has good, dynamically stable operation, our proposed method is advantageous in high‐speed switching for signal processing. Polarization optical bistabilities are detailed using coupled‐mode equations and rate equations for the CC‐DFB lasers considering longitudinal hole burning and carrier‐dependent complex‐coupling coefficients. Many parameters reflecting the physical features of a complex‐coupled DFB laser are discussed. It is shown that for a CC‐DFB laser the polarization bistability induced by TM‐mode injection is much stronger for the antiphase of complex coupling than for the in phase. For the antiphase case the bistability becomes stronger if the complex‐coupled DFB laser structure is close to a pure gain grating DFB laser. © 1995 John Wiley & Sons, Inc.
A novel method is proposed to produce an optical bistability by using a dynamically stable complex coupled DFB (CC-DFB) laser with TM mode injection. In this paper polarization optical bistabilities are analyzed in detail using coupled mode equations and rate equations for the CC-DFB lasers considering the longitudinal hole burning and carrier dependent complex coupling coefficients. Several parameters reflecting the physical features of a complex coupled DFB laser are discussed. It is shown that for a CC-DFB laser the polarization bistability induced by the TM mode injection is much stronger for the antiphase of complex coupling than that for the in-phase. In addition, the influences of initial coupling condition for gain grating structure on the optical bistability are also investigated considering both cases of the antiphase and in-phase.
Experimental results of optical polarization bistability in InGaAsP lasers are reported and the causes of polarization switching and nonlinear response in this bistability are discussed. The input light signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. It was found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. Calculations using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results indicate that this bistability is a type of dispersive bistability.>
Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.
We first investigate the polarization coexistence and switching between the orthogonal π- and σ-polarization states in a free running optical bistability Tm,Ho:LLF laser. The output performances of the optical bistability Tm,Ho:LLF laser is numerically simulated, based on a new rate equation theory model taking into account the influences of polarization-dependent gain and losses. The simulation results show the polarization coexistence and switching of output laser in the process of decreasing pump power. The physical mechanism of polarization coexistence and switching is clarified by analyzing the polarization-dependent net-gain coefficients. Furthermore, the polarization coexistence and switching are experimentally realized in the optical bistability Tm,Ho:LLF laser, which validates the theoretical analysis. The theoretical model can be applied to analyze the polarization coexistence and switching in other kinds of (quasi-) three-level optical bistable lasers.
The switch-off time in a dispersive bistable laser amplifier is usually considered to be limited by the inverse of the effective carrier lifetime, the switch-off can be faster with the laser diode operating very near threshold. On the other hand, optical bistability (OB) has also been found recently in optically injection-locked semiconductor lasers; in this case however the dynamic properties have not yet been investigated. Our measured results reveal that the OB switch-off can be much faster than the carrier lifetime when the slave laser is biased far above threshold. In the experiment, two identical 1554 nm DFB-BH laser diodes ase used in the master-slave mode.>
A multi-section DFB-LD shows optical bistability subject to externally injected light signal, then it has potential applications such as wavelength conversion and optical logic gates. In this paper, we have studied the optical bistability in multi-section DFB-LD using split-step time-domain model. It is confirmed that the multi-section DFB-LD, which is excited inhomogeneously, shows bistability. The optical bistable characteristics are investigated when input light is injected into a absorptive region. Simulation results show that multi-section DFB-LD works as a flip-flop depending on the set-reset optical pulse which has a few ns in switching time and a few pj in switching energy, so that it can act as a optical logic device. Besides, if we change the carrier lifetime and the differential gain coefficient, it is expected that the response time of optical output signal can be reduced.