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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Magnetoresonance quasi-optical transistor

Alexey A. Vertiy, Sergiy P. Gavrilov, Sergey I. Tarapov

Published Jul 15, 1993• 0 citations
Publisher

Abstract

The operation principle of the optical transistor is based on the optical bistability phenomenon and inversionless (differential) amplification in the passive Fabry-Perot resonator (OR), filled with a substance having non-linear adsorption or refraction. In the millimeter wave range such resonator with a paramagnetic saturated by the UHF field under the ESR conditions is used to reach the similar purposes. In the paper the results of experimental and theoretical investigations of the non-linear OR (quasi-optical ESR-cell) with the ruby layer in 4-millimeter wave range at the temperatures T

DOI
10.1117/12.148051

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The operation principle of the optical transistor is based on the optical bistability phenomenon and inversionless (differential) amplification in the passive Fabry-Perot resonator (OR), filled with a substance having non-linear adsorption or refraction. In the millimeter wave range such resonator with a paramagnetic saturated by the UHF field under the ESR conditions is used to reach the similar purposes. In the paper the results of experimental and theoretical investigations of the non-linear OR (quasi-optical ESR-cell) with the ruby layer in 4-millimeter wave range at the temperatures T
Experimental investigations of nonlinear characteristics of the transfer coefficient (G) and bistability phenomena in a quasioptical resonator with the ruby layer saturated under the electron spin resonance conditions (ESR) are presented. Experiments have been carried out on the special radiophysical complex BURAN /1/ at the electromagnetic wave frequency ν = 75⋅109H3 and in the temperature range T = 0.9 K + 4 K and with the static magnetic field H<6 T. A two-mirror half-symmetric open resonator has the mirror aperture about 2a=8λ, the radius of a spherical mirror R = 15λ , the quality factor Q ≈8⋅103 and operates on the spectral mode TEM0011. A ruby layer (thickness h = λ/4) is placed near the plane mirror.
We propose a model for the optical transistor which can also be used for optical switching. We consider the ‘resonant optical tunnel effect’ and we show that the amplification of a modulation may be obtained by acting on the index of refraction of the intermediate nonlinear layer of a multilayer optical film. Parameters can be chosen in a technically possible range and we give a numerical estimation of these parameters when using CdS as amplifier. These results are compared with those which could be expected with a nonlinear Fabry-Perot.
A quasi-optic resonator with a paramagnetic plane-parallel layer is considered. Stationary and non-stationary excitations of fields in such open resonator by a plane linearly polarized electromagnetic wave are studied. The dependences of the OR transmission coefficient as a nonlinear function on the magnetic component of the exciting electromagnetic field and time have been calculated assuming that magnetic susceptibility in paramagnetic is connected with the amplitude of a radio-frequency magnetic field as a nonlinear function determined from the Bloch''s equations. Bistability hysteretic phenomena and unstable operating regimes of the structure in question have been found.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.