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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Amplification of light in In x Ga 1-x N/GaN semiconductor quantum dot without high intensity control fields

A. Soltany, A. Hajibadali, A. Soltani, H. Noshad, Seyyed Hossein Asadpour

Published Oct 29, 2010• 0 citations
Publisher

Abstract

This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger- Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and investigated the lasing without inversion (LWI) phenomenon in this quantum dot.

DOI
10.1117/12.891261

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This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger- Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and investigated the lasing without inversion (LWI) phenomenon in this quantum dot.
In this paper, we have realized amplification without inversion (AWI) in quantum dot (QD). A Y-type four-level system of InxGa1-xN quantum dot has been obtained and investigated for AWI. It has been shown that, with proper setting of control fields' amplitude, we can obtain reasonable gain. With proper setting of phase difference of control fields and probe field, we can obtain considerable gain in resonant wavelength. We have designed this system by solving the Schrödinger–Poisson equations for InxGa1-xN quantum dot in GaN substrate, self-consistently.
Abstract In this letter, we investigated the behaviors of the absorptive–dispersive properties of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, Schrödinger and Poisson equations must be solved self consistently for carriers (here electrons) in quantum dots. The enhanced refractive index with amplification can be obtained via adjusting the corresponding controllable parameters such as intensity, detuning and relative phase of the applied fields. Our proposed scheme provides a realistic model for controlling the index of refraction in a quantum dot nanostructure.
In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure.In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot.Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields.Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure.These results may have potential applications in high speed optical switch for quantum information technologies.
The theory of four-wave mixing (FWM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is discussed by combining the QD rate equations system, the quantum-mechanical density-matrix theory, and the pulse propagation in QD SOAs including the three region of QD structure ground state (GS), excited state (ES), and wetting layer. Also, relations for differential gain, gain integral, and nonlinear susceptibility of both pump, probe, and signal pulses were discussed. Gain and differential gain have been calculated for QD structure. FWM efficiency and its components [spectral hole burning (SHB), carrier heating, and carrier density pulsation] are calculated. It is found that inclusion of ES in the formulas and in the calculations is essential since it works as a carrier reservoir for GS. It is found that QD SOA with enough capture time from ES to GS will reduce the SHB component, and so it is suitable for telecommunication applications that require symmetric conversion and independent detuning.
The dispersion behaviors of weak probe light in an InGaN/GaN quantum dot (QD) nanostructure driven by a coherent coupling field is investigated. InGaN/GaN QD nanostructure is designed numerically by solving the Schrödinger–Poisson coupled equations. By specific values of QD radius, an appropriate four-level QD nanostructure which is suitable for interaction by a weak probe light and a coherent coupling field is designed. It is shown that switching from normal to anomalous dispersion can be achieved by the intensity of coupling field. Therefore, fast light propagation in this model can be obtained by reduced absorption.
In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (In(x)Ga(1-x)N/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field.