Applied Optics

Investigation of optical bistability in a double In_xGa_1−xN/GaN quantum-dot nanostructure via inter-dot tunneling effect

A. Soltani, Rajab Nasehi, Seyyed Hossein Asadpour, Mohammad Mahmoudi, HAMID RAHIMPOUR SOLEIMANI

Published Mar 23, 2015• 15 citations

Abstract

In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (In(x)Ga(1-x)N/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field.

DOI: 10.1364/ao.54.002606

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