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Laser Physics Letters

A quintuple quantum dot system for electrical and optical control of multi/bistability in a telecommunication window

Mohammad Reza Mehmannavaz, Hamed Sattari

Published Jan 9, 2015• 12 citations
Publisher

Abstract

We propose a model for a quintuple coupled quantum dot system based on a GaAs/AlGaAs heterostructure. Then, we analyze the optical bistability (OB) and optical multistability (OM) behaviours and transition between the regimes at a wavelength of We take the benefit of consecutive and parallel interdot tunnelling and an incoherent pumping field for electrical and even optical control of the processes. It is shown that OB, OM and transition between them can be accomplished and controlled by adjusting the rate of the inter-dot tunnellings (electrical bias), probe wavelength detuning and rate of the optical incoherent pumping field. By proper choice of the controlling parameters, the bistable hysteresis loop becomes narrower, which makes it easier for the cavity field to reach saturation. We interpret the OB and OM behaviours by discussing the absorption of the active medium. We also investigate switching time between the two stable states when the output field jumps from a lower branch to an upper branch. Such a controllable OB/OM and transition between them in multiple QD molecules at a wavelength of 1.550 μ m, may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.

DOI
10.1088/1612-2011/12/2/025201

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We propose a model for a quintuple coupled quantum dot system based on a GaAs/AlGaAs heterostructure. Then, we analyze the optical bistability (OB) and optical multistability (OM) behaviours and transition between the regimes at a wavelength of We take the benefit of consecutive and parallel interdot tunnelling and an incoherent pumping field for electrical and even optical control of the processes. It is shown that OB, OM and transition between them can be accomplished and controlled by adjusting the rate of the inter-dot tunnellings (electrical bias), probe wavelength detuning and rate of the optical incoherent pumping field. By proper choice of the controlling parameters, the bistable hysteresis loop becomes narrower, which makes it easier for the cavity field to reach saturation. We interpret the OB and OM behaviours by discussing the absorption of the active medium. We also investigate switching time between the two stable states when the output field jumps from a lower branch to an upper branch. Such a controllable OB/OM and transition between them in multiple QD molecules at a wavelength of 1.550 μ m, may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.
We analyze the optical bistability (OB) behavior in a multifold quantum dot (QD) molecule composed of five quantum dots controlled by the tunneling coupling. It is shown that the optical bistability can strongly be affected by the tunneling inter-dot coupling coefficients as well as detuning parameters. In addition, we find that the rate of an incoherent pump field has a leading role in modification of the OB threshold. We then generalize our analysis to the case of multifold quantum dot molecules where the number of the quantum dots is N (with a center dot and satellite dots). We compare the OB features that could occur in a multifold QD system consist of three ( ), four ( ), and five ( N = 5) quantum dots. We realize that the OB threshold increases as the number of satellite QDs increases. Such controllable optical bistability in multiple QD molecules may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.
Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.
In this paper, we proposed a new model based on the electron tunneling effect in a four-level quantum dot molecule (QDM) for studying the optical bistability (OB) and optical multistability (OM). The QDM interacts with a probe and two coupling and Laguerre–Gaussian (LG) fields. We found that by adjusting the electron tunneling effect and the parametric controlling of LG light, the transition from OB to OM or vice versa is possible. Moreover, due to the simultaneous interaction between coupling and LG lights with the same optical transition adjusting the threshold of OB and OM by orbital angular momentum (OAM) of the LG light becomes achievable. Our results show that by adjusting the simultaneous effect of electron tunneling and OAM state of the vortex light, the favorable OB and OM patterns with adjustable intensity thresholds are achievable. Our proposed model may have potential application in quantum information science based on quantum dot (QD) devices.
Abstract In this paper, we investigate the optical bistability (OB) and optical multistability (OM) phenomena for a quantum dot nanostructure via two different mechanisms. The first process is based on the application of the incoherent pumping field while the second one is due to the ratio between the injection and cavity injection rates. We show that the appearance of OB and OM properties in the system depends strongly on the presence of these mechanisms. It is found that OB appears in the presence of both mechanisms, but OM appears only when both mechanisms are present in the system simultaneously. We also study the linear absorption behaviors for the case when OB and OM are observed in the system. It is shown that for the multistable state, the absorption properties of the system are different from the bistable state, which has a strong dependence on incoherent processes.
In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (In(x)Ga(1-x)N/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field.
This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.