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Modern Physics Letters B

Anomalous dispersion via coherent field in an InGaN/GaN quantum dot nanostructure

Ghahraman Solookinejad, M. Panahi, Elnaz Ahmadi Sangachin, Seyyed Hossein Asadpour

Published Jan 22, 2016• 2 citations
Publisher

Abstract

The dispersion behaviors of weak probe light in an InGaN/GaN quantum dot (QD) nanostructure driven by a coherent coupling field is investigated. InGaN/GaN QD nanostructure is designed numerically by solving the Schrödinger–Poisson coupled equations. By specific values of QD radius, an appropriate four-level QD nanostructure which is suitable for interaction by a weak probe light and a coherent coupling field is designed. It is shown that switching from normal to anomalous dispersion can be achieved by the intensity of coupling field. Therefore, fast light propagation in this model can be obtained by reduced absorption.

DOI
10.1142/s0217984916500202

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The dispersion behaviors of weak probe light in an InGaN/GaN quantum dot (QD) nanostructure driven by a coherent coupling field is investigated. InGaN/GaN QD nanostructure is designed numerically by solving the Schrödinger–Poisson coupled equations. By specific values of QD radius, an appropriate four-level QD nanostructure which is suitable for interaction by a weak probe light and a coherent coupling field is designed. It is shown that switching from normal to anomalous dispersion can be achieved by the intensity of coupling field. Therefore, fast light propagation in this model can be obtained by reduced absorption.
Abstract In this letter, we investigated the behaviors of the absorptive–dispersive properties of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, Schrödinger and Poisson equations must be solved self consistently for carriers (here electrons) in quantum dots. The enhanced refractive index with amplification can be obtained via adjusting the corresponding controllable parameters such as intensity, detuning and relative phase of the applied fields. Our proposed scheme provides a realistic model for controlling the index of refraction in a quantum dot nanostructure.
In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure.In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot.Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields.Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure.These results may have potential applications in high speed optical switch for quantum information technologies.
Tunable phase control of the slow and fast light propagation through a defect slab medium doped by four-level InGaN/GaN quantum dot structure is demonstrated. By solving the Schrödinger and Poisson’s equations self-consistently, a spherical InGaN quantum dot with GaN barrier shell which can interact by terahertz (THz) signal field is designed numerically. It is found that the phase variation of THz signal field imparts the tunability in the group velocity of the transmitted and reflected pulses through a dielectric slab.
Abstract In this paper, we propose a new configuration for manipulating Goos–Hänchen (GH) shifts in reflected and transmitted probe beams in a fixed geometrical scheme with a confined four-level InGaN/GaN quantum dot nanostructure. Here, the four-level quantum dot nanostructure is driven by a weak probe light, a coherent coupling field, and two broadband polarized fields that serve as the incoherent pumping fields. We theoretically show that by modulation of the external coupling field, incoherent pumping rates, and detuning of the probe light, the GH shifts in the reflected and transmitted probe light can be controlled. Our results show that enhanced GH shifts of reflected and transmitted probe beams can be obtained by simultaneous use of incoherent pumping rates and detuning of the probe light. Moreover, we find that the GH shifts in both reflected and transmitted probe beams can be negative or positive at certain angles of the incident probe field. Thus, these results may provide some new possibilities for technological applications in all-optical systems based on nanostructure devices.
With the presence of the signal pulse, a quantum dot (QD) four-level structure interacting with four fields forms a double-cascade configuration. The linear optical properties for amplification, absorption, and dispersion of two weak near-infrared (NIR) lights in this scheme are investigated. It shows that the amplification, transparency, normal and anomalous dispersion of the probe and signal fields, i.e., the two NIR waves, can be achieved by adjusting the relative phase of the applied lasers, the probe detuning, and the two pump Rabi energies appropriately, while when the signal pulse is removed, the nonlinear optical phenomenon four-wave mixing (FWM) originating from quantum interference is demonstrated. A highly efficient FWM process with a NIR mixing field generated can be realized in this system. Such investigation in a semiconductor QD system with flexible design and widely adjustable parameters may provide new possibilities for realizing the efficient generation and gain of NIR waves and manipulating light propagation between subluminal and superluminal in the solid-state materials.