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Laser Physics Letters

Enhancement of refractive index with amplification in an InGaN/GaN quantum dot nanostructure

M. Jamshidnejad, Majid Vaezzadeh, HAMID RAHIMPOUR SOLEIMANI, Seyyed Hossein Asadpour

Published Mar 4, 2016• 18 citations
Publisher

Abstract

Abstract In this letter, we investigated the behaviors of the absorptive–dispersive properties of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, Schrödinger and Poisson equations must be solved self consistently for carriers (here electrons) in quantum dots. The enhanced refractive index with amplification can be obtained via adjusting the corresponding controllable parameters such as intensity, detuning and relative phase of the applied fields. Our proposed scheme provides a realistic model for controlling the index of refraction in a quantum dot nanostructure.

DOI
10.1088/1612-2011/13/4/045204

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Abstract In this letter, we investigated the behaviors of the absorptive–dispersive properties of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, Schrödinger and Poisson equations must be solved self consistently for carriers (here electrons) in quantum dots. The enhanced refractive index with amplification can be obtained via adjusting the corresponding controllable parameters such as intensity, detuning and relative phase of the applied fields. Our proposed scheme provides a realistic model for controlling the index of refraction in a quantum dot nanostructure.
In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure.In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot.Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields.Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure.These results may have potential applications in high speed optical switch for quantum information technologies.
The dispersion behaviors of weak probe light in an InGaN/GaN quantum dot (QD) nanostructure driven by a coherent coupling field is investigated. InGaN/GaN QD nanostructure is designed numerically by solving the Schrödinger–Poisson coupled equations. By specific values of QD radius, an appropriate four-level QD nanostructure which is suitable for interaction by a weak probe light and a coherent coupling field is designed. It is shown that switching from normal to anomalous dispersion can be achieved by the intensity of coupling field. Therefore, fast light propagation in this model can be obtained by reduced absorption.
This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger- Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and investigated the lasing without inversion (LWI) phenomenon in this quantum dot.
Abstract We proposed a model for adjusting Goos–Hänchen (GH) shifts in a cavity with quantum dot (QD) nanostructure in this letter. The actual component of the susceptibility was studied by analytical solution of the coherence term of the density matrix elements, and the refractive index of the QD nanostructure was explored. We discovered that the intracavity medium became phase sensitive because of the electron tunneling action. As a result, the relative phase of applied lights may be used to manipulate the medium’s refraction index. The GH shifts in reflected and transmitted light beams in high refractive index QD nanostructures with diminishing probe absorption were next examined. We discovered that the GH shifts of reflected and transmitted lights are greatly influenced by the applied lights’ relative phase. We established that greater negative or positive GH shifts in reflected and transmitted photons are conceivable in the presence of electron tunneling.