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IEEE Photonics Technology Letters

Dynamics of Spectral Hole Burning in EDFAs: Dependence on Temperature

João M. Ferreira, Lutz Rapp

Published Oct 19, 2011• 4 citations
Publisher

Abstract

The dependence of the dynamical response of spectral hole burning (SHB) of an erbium-doped fiber amplifier (EDFA) on temperature is investigated. Experimental results show that gain variations decrease with increasing temperature. The dependence of the transition time on temperature is weak with a trend to larger values at higher temperatures. We also observe that EDFAs using two or three energy levels of the erbium ions show a similar behavior with respect to temperature variation. However, the three-level EDFA presents a higher dependence of the magnitude of induced gain variations on temperature.

DOI
10.1109/lpt.2011.2172598

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SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)•Jan 22, 2003•0 citations
The dependence of the dynamical response of spectral hole burning (SHB) of an erbium-doped fiber amplifier (EDFA) on temperature is investigated. Experimental results show that gain variations decrease with increasing temperature. The dependence of the transition time on temperature is weak with a trend to larger values at higher temperatures. We also observe that EDFAs using two or three energy levels of the erbium ions show a similar behavior with respect to temperature variation. However, the three-level EDFA presents a higher dependence of the magnitude of induced gain variations on temperature.
Gain-difference spectra are used to show that 980-nm band pump wavelength changes can significantly effect spectral-hole burning (SHB) in erbium-doped fiber amplifiers (EDFAs). Gain measurements made using a number of different signal and pump wavelengths help to characterize the underlying inhomogeneous spectral properties of EDFAs and a framework for modeling these effects is presented. Despite the difficulty of obtaining the needed subpopulation specific cross section spectra, this model can be used to explain seemingly anomalous changes in the gain spectra of EDFA as a result of changes in signal or pump wavelength.
A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.