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Journal of the Optical Society of America B

Study on the dynamics of a gain spectral hole in silica-based erbium-doped fiber at 77 K

Shunsuke Ono, Setsuhisa Tanabe, Masato Nishihara, Etsuko Ishikawa

Published Aug 1, 2005• 4 citations

Abstract

A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.

DOI: 10.1364/josab.22.001594

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A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.

Abstract We observed for the first time to our knowledge the presence of replica holes in the fluorescencespectrum of EDFA. Saturating the Er 3+ transition at a single wavelength we noticed theappearance of spectral holes in the ASE other than the usual one around the saturating laser. Wequalitatively explain the effect and confront the experimental results with the homogeneouslybroadened model. Introduction One of the limiting factors to state-of-the-art DWDM systems is the effect of Spectral Hole Burning (SHB) inErbium Doped Fiber Amplifiers (EDFAs). It has been already observed that the presence of a saturating signal ina given wavelength induces a hole around the signal in the gain and Amplified Spontaneous Emission (ASE)spectra [1],[2]. These holes in EDFAs are typically between 2 and 8 nm width, which is enough to degrade theneighboring channels. The SHB effect is due to the inhomogeneous broadening of the Er 3+ transitions, causedby site-to-site variations of the local electric field in the silica based host, which induces different ions laser linesproperties.This work shows the existence of spectral holes burned at wavelengths far from the saturating laserline, called Spectral Replica Holes (SRHs). The physical background that explains SRHs is based on theinhomogeneously broadened two-level Stark Splitted

The gain saturation characteristics of erbium-doped fiber amplifiers, which are of importance for applications in optical fiber communications, will depend strongly on the relative importance of homogeneous and inhomogeneous saturation. We have recently reported low temperature spectral hole burning measurements in an erbium-doped fiber with an alumino-silicate core1. From these measurements the homogeneous linewidth was determined to be 11.5 nm. This is consistent with the homogeneous gain saturation observed for alumino-silicate fibers.2 For erbium-doped fibers with GeO2:SiO2 cores, on the other hand, inhomogeneous saturation effects have been reported.3

The dependence of the dynamical response of spectral hole burning (SHB) of an erbium-doped fiber amplifier (EDFA) on temperature is investigated. Experimental results show that gain variations decrease with increasing temperature. The dependence of the transition time on temperature is weak with a trend to larger values at higher temperatures. We also observe that EDFAs using two or three energy levels of the erbium ions show a similar behavior with respect to temperature variation. However, the three-level EDFA presents a higher dependence of the magnitude of induced gain variations on temperature.

Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental methods and a gain's model. Our experimental method allow us to measure the first homogeneous linewidth of the 1.5

\mu

m erbium emission with gain spectral hole burning consistently with the other measurement in the literature and the model explains the differences observed in literature between GSHB and other measurement methods.