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Observation of Replica Holes in Erbium Doped Silica Fiber

Thiago P. Mayer Alegre, Gustavo S. Wiederhecker, Hugo L. Fragnito

Published Jan 1, 2003• 1 citation
OpenAlex

Abstract

Abstract We observed for the first time to our knowledge the presence of replica holes in the fluorescencespectrum of EDFA. Saturating the Er 3+ transition at a single wavelength we noticed theappearance of spectral holes in the ASE other than the usual one around the saturating laser. Wequalitatively explain the effect and confront the experimental results with the homogeneouslybroadened model. Introduction One of the limiting factors to state-of-the-art DWDM systems is the effect of Spectral Hole Burning (SHB) inErbium Doped Fiber Amplifiers (EDFAs). It has been already observed that the presence of a saturating signal ina given wavelength induces a hole around the signal in the gain and Amplified Spontaneous Emission (ASE)spectra [1],[2]. These holes in EDFAs are typically between 2 and 8 nm width, which is enough to degrade theneighboring channels. The SHB effect is due to the inhomogeneous broadening of the Er 3+ transitions, causedby site-to-site variations of the local electric field in the silica based host, which induces different ions laser linesproperties.This work shows the existence of spectral holes burned at wavelengths far from the saturating laserline, called Spectral Replica Holes (SRHs). The physical background that explains SRHs is based on theinhomogeneously broadened two-level Stark Splitted

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Gain-difference spectra are used to show that 980-nm band pump wavelength changes can significantly effect spectral-hole burning (SHB) in erbium-doped fiber amplifiers (EDFAs). Gain measurements made using a number of different signal and pump wavelengths help to characterize the underlying inhomogeneous spectral properties of EDFAs and a framework for modeling these effects is presented. Despite the difficulty of obtaining the needed subpopulation specific cross section spectra, this model can be used to explain seemingly anomalous changes in the gain spectra of EDFA as a result of changes in signal or pump wavelength.

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Distributed gain and spectral gain-saturation effects of erbium-doped fiber amplifier (EDFA) were measured using a coherent reflectrometry technique. We find that the spectral performance can be improved if the gain needs are relaxed. A hole in the spectral dependence of the gain depletion was also observed, which could be related to the Spectral Hole Burning (SHB) phenomenon.

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Study on the dynamics of a gain spectral hole in silica-based erbium-doped fiber at 77 K

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A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.

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We report here, for the first time, observations of offset and collaterally burned holes in erbium-doped fiber amplifiers (EDFAs). This additional spectral-hole-burning structure in the 1.5-μm region will impact the application of EDFAs in the wavelength-division-multiplexed environment as well as their descriptive models.

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Room temperature spectral hole-burning in erbium-doped fiber amplifiers

A.K. Srivastava, J.L. Zyskind, James W. Sulhoff +2 more

Summary form only given. In this paper we report the first room temperature measurements of spectral hole-burning depths and widths of an Er-doped fiber amplifier (EDFA). The alumino-germano-silicate EDFA was pumped at 1480 nm and had a small signal gain of 25 dB at 1551 nm. Spectral gain measurements were carried out in the range 1535-1570 nm using a lock-in technique and spectral subtraction for accurate determination of SHB properties.

Optical Fiber Communication Conference•Jan 1, 1996•38 citations

Polarization hole-burning in erbium-doped fiber amplifiers with birefringence

Paul F. Wysocki

In Er-doped fiber amplifiers (EDFA), ASE polarized orthogonal to a saturating signal experiences more gain than ASE with the same polarization as the saturating signal.1 The accumulated enhancement of orthogonal ASE degrades the performance of long systems.1,2 This effect has been observed in single EDFAs using differential measurement techniques.3,4 A computer model of polarization hole-burning (PHB) has been presented.5 It postulates that each ion has an ellipsoid-like surface representing the emission and absorption cross-sections. The ratio of the major to minor cross-sections is the anisotropy parameter:

Optical Amplifiers and Their Applications•Jan 1, 1994•7 citations
Abstract We observed for the first time to our knowledge the presence of replica holes in the fluorescencespectrum of EDFA. Saturating the Er 3+ transition at a single wavelength we noticed theappearance of spectral holes in the ASE other than the usual one around the saturating laser. Wequalitatively explain the effect and confront the experimental results with the homogeneouslybroadened model. Introduction One of the limiting factors to state-of-the-art DWDM systems is the effect of Spectral Hole Burning (SHB) inErbium Doped Fiber Amplifiers (EDFAs). It has been already observed that the presence of a saturating signal ina given wavelength induces a hole around the signal in the gain and Amplified Spontaneous Emission (ASE)spectra [1],[2]. These holes in EDFAs are typically between 2 and 8 nm width, which is enough to degrade theneighboring channels. The SHB effect is due to the inhomogeneous broadening of the Er 3+ transitions, causedby site-to-site variations of the local electric field in the silica based host, which induces different ions laser linesproperties.This work shows the existence of spectral holes burned at wavelengths far from the saturating laserline, called Spectral Replica Holes (SRHs). The physical background that explains SRHs is based on theinhomogeneously broadened two-level Stark Splitted
Gain-difference spectra are used to show that 980-nm band pump wavelength changes can significantly effect spectral-hole burning (SHB) in erbium-doped fiber amplifiers (EDFAs). Gain measurements made using a number of different signal and pump wavelengths help to characterize the underlying inhomogeneous spectral properties of EDFAs and a framework for modeling these effects is presented. Despite the difficulty of obtaining the needed subpopulation specific cross section spectra, this model can be used to explain seemingly anomalous changes in the gain spectra of EDFA as a result of changes in signal or pump wavelength.
A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.
In Er-doped fiber amplifiers (EDFA), ASE polarized orthogonal to a saturating signal experiences more gain than ASE with the same polarization as the saturating signal.1 The accumulated enhancement of orthogonal ASE degrades the performance of long systems.1,2 This effect has been observed in single EDFAs using differential measurement techniques.3,4 A computer model of polarization hole-burning (PHB) has been presented.5 It postulates that each ion has an ellipsoid-like surface representing the emission and absorption cross-sections. The ratio of the major to minor cross-sections is the anisotropy parameter: