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Physical Review B

Er sensitization by a thin Si layer: Interaction-distance dependence

Brian Julsgaard, Yingwei Lu, R. V. Skougaard Jensen, Thomas Garm Pedersen, Kjeld Pedersen, J. Chevallier, Péter Balling, Arne Nylandsted Larsen

Published Aug 19, 2011• 6 citations

Abstract

From photoluminescence measurements on sensitized erbium in $a$-Si/${\mathit{SiO}}_{2}$:Er/${\mathit{SiO}}_{2}$ multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be $0.22\ifmmode\pm\else\textpm\fi{}0.02$ nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium ${}^{4}\phantom{\rule{-0.16em}{0ex}}{I}_{13/2}\ensuremath{\rightarrow}{\phantom{\rule{0.16em}{0ex}}}^{4}\phantom{\rule{-0.16em}{0ex}}{I}_{15/2}$ transition may lead to an exaggerated estimate of the interaction distance.

DOI: 10.1103/physrevb.84.085403

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Applied Physics B•Feb 1, 2002•5 citations

From photoluminescence measurements on sensitized erbium in

a

-Si/

{\mathit{SiO}}_{2}

:Er/

{\mathit{SiO}}_{2}

multilayers, we determine the characteristic interaction length of the sensitization process from the silicon-layer sensitizer to the erbium-ion receiver to be

0.22\ifmmode\pm\else\textpm\fi{}0.02

nm. By using sufficiently low temperatures in the fabrication steps, we ensure that diffusion of erbium ions does not affect our results. In addition, we demonstrate that saturation of the erbium

{}^{4}\phantom{\rule{-0.16em}{0ex}}{I}_{13/2}\ensuremath{\rightarrow}{\phantom{\rule{0.16em}{0ex}}}^{4}\phantom{\rule{-0.16em}{0ex}}{I}_{15/2}

transition may lead to an exaggerated estimate of the interaction distance.

Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for determining the excitation cross section of the Er ion under both continuous and pulsed optical pumping is discussed. The value obtained for the effective excitation cross section of erbium ions in silicon, σ = 5 × 10 −14 cm 2 at a temperature of 8 K, is an order of magnitude larger than the values known from published material.

Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO

_2

Thin Films on Silicon

Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO

_2

thin films on Si (100), r-sapphire, and SrTiO

_3

(100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO

_2

(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO

_3

, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top capping layers of undoped TiO

_2

. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO

_2

/Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films.