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Journal of Experimental and Theoretical Physics Letters

Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

Konstantin E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasilnikova, Dmitry V. Shengurov, Viacheslav B. Shmagin, B. A. Andreev, Z. F. Krasil’nik

Published Feb 1, 2015• 4 citations
Publisher

Abstract

Optical losses caused by the interaction of radiation with optically active Er3+ ions in epitaxial waveguide structures Si:Er/SOI have been directly measured. The cross section for the 4 I 13/2 → 4 I 15/2 radiative transition in the Er3+ ion has been estimated as σ300 K ∼ 8 × 10−19 cm2 at T = 300 K and σ10 K ∼ 10−17 cm2 at T = 10 K.

DOI
10.1134/s0021364014240096

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Optical losses caused by the interaction of radiation with optically active Er3+ ions in epitaxial waveguide structures Si:Er/SOI have been directly measured. The cross section for the 4 I 13/2 → 4 I 15/2 radiative transition in the Er3+ ion has been estimated as σ300 K ∼ 8 × 10−19 cm2 at T = 300 K and σ10 K ∼ 10−17 cm2 at T = 10 K.
Absorption coefficient (αabs) of Er3+ ions coupled to Si nanoclusters (Si-nc) in SiO2 has been determined by optical transmission measurements in rib-loaded waveguides characterized by different refractive indices, thus gauging an Er3+ absorption cross section (σabs) of 0.4–1.2×10−20cm2 at 1534nm. Although no significant enhancement due to the presence of Si-nc was observed, a clear dependence on the refractive index has been found. Measurements of the decay lifetime permit one to model the behavior as due to both local and mean field variations caused by the composite nature of the core waveguide layer.
We present measurements of the optical absorption cross section of the I15∕24→I13∕24 transition at 1.5μm of Er3+ ions embedded in SiO2 and Si-rich oxide, using cavity ringdown spectroscopy on thin films. The peak absorption cross section for Er3+ embedded in Si-rich oxide (10at.% excess Si) was found to be (8±2)×10−21cm2 at 1536nm, similar to typical values for Er embedded in SiO2. The data imply that the silicon nanoclusters incorporated in Si-rich oxide do not enhance the peak cross section of the Er3+ I15∕24−I13∕24 transition by 1-2 orders of magnitude, contrary to what has been reported in earlier work.
Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for determining the excitation cross section of the Er ion under both continuous and pulsed optical pumping is discussed. The value obtained for the effective excitation cross section of erbium ions in silicon, σ = 5 × 10 −14 cm 2 at a temperature of 8 K, is an order of magnitude larger than the values known from published material.
Er 3+ ions produce a sharp line emission that has small absorption cross section, long radiative lifetime, and is independent of external perturbations. These optical properties of the Er3+ ions limit the pumping efficiency and tunability of the emission line. In this work we present a study in which Er3+ emission was modified by coupling an ensemble of Er3+ ions to a microcavity resonance. The optical response of an optical cavity that consists of an Er2O3 layer confined between Si/SiO2 distributed Bragg reflectors is studied. When the cavity is in resonance with the optical transition of the Er3+ ions, the resonances in the reflectivity spectra split. The results are explained by a standard semiclassical model of atom–photon coupling.
Based on the transmission spectra of Er3+-doped LiNbO3 optical waveguides in this paper we report some experimental and theoretical results concerning the evaluation of some spectroscopic parameters which characterize the above mentioned waveguides. The absorption experimental spectra were used to determine the homogeneous absorption and emission cross sections (utilising the density matrix formalism and the McCumber's theory and taking into account the Stark splitting of the levels), the oscillator strength of the absorption transition, the spontaneous emission probabilities, the radiative lifetime and the excitation energy in three regions of the optical spectrum: around 1550 nm, 980 nm and 550 nm, respectively. Also, we measured the rising and falling times and we calculated the homogeneous upconversion factor corresponding to the transition 4I15/2->4F7/2.