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Applied Physics Letters

Refractive index dependence of the absorption and emission cross sections at 1.54μm of Er3+ coupled to Si nanoclusters

N. Daldosso, Daniel Navarro‐Urrios, Mirko Melchiorri, Lorenzo Pavesi, C. Sada, Fabrice Gourbilleau, R. Rizk

Published Apr 14, 2006• 36 citations
Publisher

Abstract

Absorption coefficient (αabs) of Er3+ ions coupled to Si nanoclusters (Si-nc) in SiO2 has been determined by optical transmission measurements in rib-loaded waveguides characterized by different refractive indices, thus gauging an Er3+ absorption cross section (σabs) of 0.4–1.2×10−20cm2 at 1534nm. Although no significant enhancement due to the presence of Si-nc was observed, a clear dependence on the refractive index has been found. Measurements of the decay lifetime permit one to model the behavior as due to both local and mean field variations caused by the composite nature of the core waveguide layer.

DOI
10.1063/1.2195773

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Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.

Progress In Electromagnetics Research B•Jan 1, 2008•15 citations
Absorption coefficient (αabs) of Er3+ ions coupled to Si nanoclusters (Si-nc) in SiO2 has been determined by optical transmission measurements in rib-loaded waveguides characterized by different refractive indices, thus gauging an Er3+ absorption cross section (σabs) of 0.4–1.2×10−20cm2 at 1534nm. Although no significant enhancement due to the presence of Si-nc was observed, a clear dependence on the refractive index has been found. Measurements of the decay lifetime permit one to model the behavior as due to both local and mean field variations caused by the composite nature of the core waveguide layer.
We present measurements of the optical absorption cross section of the I15∕24→I13∕24 transition at 1.5μm of Er3+ ions embedded in SiO2 and Si-rich oxide, using cavity ringdown spectroscopy on thin films. The peak absorption cross section for Er3+ embedded in Si-rich oxide (10at.% excess Si) was found to be (8±2)×10−21cm2 at 1536nm, similar to typical values for Er embedded in SiO2. The data imply that the silicon nanoclusters incorporated in Si-rich oxide do not enhance the peak cross section of the Er3+ I15∕24−I13∕24 transition by 1-2 orders of magnitude, contrary to what has been reported in earlier work.
Er 3+ ions produce a sharp line emission that has small absorption cross section, long radiative lifetime, and is independent of external perturbations. These optical properties of the Er3+ ions limit the pumping efficiency and tunability of the emission line. In this work we present a study in which Er3+ emission was modified by coupling an ensemble of Er3+ ions to a microcavity resonance. The optical response of an optical cavity that consists of an Er2O3 layer confined between Si/SiO2 distributed Bragg reflectors is studied. When the cavity is in resonance with the optical transition of the Er3+ ions, the resonances in the reflectivity spectra split. The results are explained by a standard semiclassical model of atom–photon coupling.
Angular spontaneous emission rates and lifetimes of Er3+ in Si/SiO2 microcavities are calculated for cavity lengths close to full and half-wavelengths. For a half-wavelength cavity, the calculations show that the spontaneous lifetime is sensitive to the variation of cavity length, and agrees very well with the experimental data measured by Vredenberg, Hunt, Schubert, Jacobson, Poate, and Zydzik [Phys. Rev. Lett. 71, 517 (1993)]. This variation comes from a coupling rate change into the cavity normal. For a full wavelength cavity, the lifetime is less sensitive to cavity length due to strong coupling of spontaneous emission to a fundamental waveguide mode.
The spontaneous emission lifetime and intensity of Er implanted into SiO2{\mathrm{SiO}}_{2}SiO2​ is modified by a Si/SiO2{\mathrm{SiO}}_{2}SiO2​ planar microcavity. The cavity strongly affects the coupling of the optically excited Er3+{\mathrm{Er}}^{3+}Er3+ to the radiative and waveguiding modes of the system, resulting in a spontaneous lifetime of 14.8 ms for a cavity off-resonance with the Er3+{\mathrm{Er}}^{3+}Er3+ versus a lifetime of 9.1 ms for an on-resonance cavity. The observed spontaneous emission lifetime changes agree well with calculated values based on a computation method which is also presented.
Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.