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Progress In Electromagnetics Research B

INVESTIGATION OF LIGHT AMPLIFICATION IN SI-NANOCRYSTAL-ER DOPED OPTICAL FIBER

Ali Rostami, Ahmad Salmanogli

Published Jan 1, 2008• 15 citations
Publisher

Abstract

Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.

DOI
10.2528/pierb08061303

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Muthanna Journal of Pure Science•Dec 30, 2020•0 citations
Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.
Net optical gain in silicon nanocrystals (Si-nc) has been measured by pump and probe transmission experiments. Si-nc active layers have been produced by plasma enhanced chemical vapor deposition on transparent quartz substrates. Continuous and pulsed pump and probe transmission measurements have shown clear evidences of net probe amplification with fast (nanosecond) response time. Transfer matrix and rate equations modeling of the nonlinear signal transmission allowed to extract the gain spectra for different pump intensities yielding good qualitative agreement with the experimental data. Gain cross sections per nanocrystals of the order of 3×10−16cm2 have been deduced. The physical origin of the optical amplification is interpreted within a four level recombination model describing the dynamics of strongly localized excitons at the Si-nc∕SiO2 interface.
Energy transfer in erbium doped optical waveguides based on silicon This thesis describes the energy transfer processes\noccurring in materials that can be used for the fabrication of silicon compatible optical integrated circuits, operating at 1.54 mm.The thesis consists of three parts: Part I discusses energy transfer in optical waveguide amplifiers on silicon. The waveguide amplifiers use an intra-4f transition of the rare earth ion erbium occurring at 1.54 mm. To achieve significant amplification, high\n Er concentrations (> 10 20 cm -3 ) are required. At these concentrations Er ions can interact, resulting in co-operative\n upconversion, in which one excited Er ion is excited into a higher energy state, while a neighboring Er ion returns to the ground\n state. In Part I this and other gain limiting effects are investigated. In particular, it is shown that the atomic-scale Er distribution\n is of crucial importance for the performance of Er doped waveguide amplifiers. Part II discusses the energy transfer processes\n occurring in Er doped silicon. It is shown that Er in silicon can be excited by electron-hole pair recombination in an\n impurity-Auger effect. This effect may be used to fabricate an electrically pumped Er doped waveguide amplifier. The reverse\n process can also occur: an excited Er ion can de-excite and generate an electron-hole pair in the silicon, due to a non-radiative\n backtransfer process. This process has an efficiency of 70% at room temperature. This observation enables the fabrication of an\n Er doped photo-detector in a Si waveguide operating at 1.54 mm. The performance of such a detector is discussed. Part III\n discusses the interaction between Er and silicon nanocrystals embedded in SiO2. Si nanocrystals efficiently absorb visible light,\n resulting in the generation of quantum confined electron-hole pairs. The electron-hole pairs efficiently transfer energy to Er.\n Due to the energy transfer, the effective Er absorption cross section is five orders of magnitude larger than for direct optical\n excitation. Silicon nanocrystals may thus be used to increase the pumping efficiency of an Er doped waveguide amplifier. It is\n shown that a single nanocrystal can excite ~1 Er ion at a time and that an optical gain of 0.6 dB/cm may be achieved in a typical\n nanocrystal sensitized waveguide amplifier. Due to the broad absorption band of Si nanocrystals, a broad band light source can\n be used as pump source in such a nanocrystal sensitized Er doped waveguide amplifier.
The need for higher bandwidth and people's desire to be "always connected" have spurred a new era of silicon photonics. The traditional integrated electrical transmission lines have been an obstacle preventing ultra high speed communication. Using monolithic chips of integrated optoelectronic circuits from silicon provides an economic way to realize Tetra Byte/Second bandwidth in a variety of areas such as "fiber to the home" and the buses linking chips inside computer. The heart of such optoelectronics-silicon laser-is still in pursuit. One of the most promising approaches is the erbium doped silicon nanocrystals embedded in silica system. External photon or hot electrons injection excites the silicon nanocrystals, which then transfer their energies to nearby erbium ions to emit light at 1.55 μm wavelength range. In this thesis, we investigate the effects of cavity and electric field on energy transfer from Si nanocrystals (Si-nc's) to Er ions, and simulate material gain in such systems. Our results show that microcavity can enhance the Forster energy transfer and material gain, reducing the requirements for Si-nc pumping. The electric field will hinder the radiation decay of Si-nc, but we have to further explore the tunneling mechanism before concluding the overall effect of electric field. Some future work needs to be done, which will shine some light on the design of the silicon laser.
"Doping a part of the optical fiber core by (Er3+ ) ions in presence of external pumping power will lead to form the erbium-doped fiber amplifier (EDFA).The performance of this optical amplifier depends on (the power and the wavelength of the pumping laser, the power and wavelength of the input signal, amplifier length, ion concentration). These parameters will affect the characteristics of EDFA such as amplifier gain, gain saturation, noise figure and output power. However, these characteristics can be determined by solving the EDFA propagation and rate equations. The solution of these equations of two-level laser medium can be done numerically. In this paper, we are proposed a novel method to solve these equations. The reconstructed results are perfectly coincided the well known numerical results.
In this paper, we investigate the effects of complex energy transfer dynamics and Gaussian profiles on the gain and noise figure performance of erbium-doped fiber amplifiers (EDFAs) with high doping concentration. We use a two-level system to study the complex energy transfer dynamics that comes from the homogeneous up-conversion (HUC) and the pair-induced quenching (PIQ). In our model, the system is stimulated by a pump source at the wavelength of 1480 nm and operated with a signal source at the wavelength of 1560 nm. Assuming a uniform distribution of erbium ions in the fiber core, we approximate the fundamental mode distributions by Gaussian profiles which are commonly used to calculate the mode radius or spot size. Using the numerical calculations and analysis of the rate and power propagation equations for a two-level model under consideration, the most advantageous Gaussian profile is determined as the Whitley mode radius to obtain a high-gain and a low-noise figure per unit length of silica-based fiber amplifiers. The effects of the number of ions per cluster and the percentage of ions in clusters on the calculated gain and noise figure are compared for several pump powers. Results are discussed to achieve a desired gain and noise figure performance, and compared with the available experimental data to verify the feasibility of the model.
Doping a part of the optical fiber core by (Er3+ ) ions in presence of external pumping power will lead to form the erbium-doped fiber amplifier (EDFA).The performance of this optical amplifier depends on (the power and the wavelength of the pumping laser, the power and wavelength of the input signal, amplifier length, ion concentration). These parameters will affect the characteristics of EDFA such as amplifier gain, gain saturation, noise figure and output power. However, these characteristics can be determined by solving the EDFA propagation and rate equations. The solution of these equations of two-level laser medium can be done numerically. In this paper, we are proposed a novel method to solve these equations. The reconstructed results are perfectly coincided the well known numerical results.