Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Applied Physics

Light amplification in silicon nanocrystals by pump and probe transmission measurements

Luca Dal Negro, M. Cazzanelli, Beniamino Danese, Lorenzo Pavesi, Fabio Iacona, G. Franzò, Francesco Priolo

Published Nov 5, 2004• 54 citations
Publisher

Abstract

Net optical gain in silicon nanocrystals (Si-nc) has been measured by pump and probe transmission experiments. Si-nc active layers have been produced by plasma enhanced chemical vapor deposition on transparent quartz substrates. Continuous and pulsed pump and probe transmission measurements have shown clear evidences of net probe amplification with fast (nanosecond) response time. Transfer matrix and rate equations modeling of the nonlinear signal transmission allowed to extract the gain spectra for different pump intensities yielding good qualitative agreement with the experimental data. Gain cross sections per nanocrystals of the order of 3×10−16cm2 have been deduced. The physical origin of the optical amplification is interpreted within a four level recombination model describing the dynamics of strongly localized excitons at the Si-nc∕SiO2 interface.

DOI
10.1063/1.1803613

Related papers

INVESTIGATION OF LIGHT AMPLIFICATION IN SI-NANOCRYSTAL-ER DOPED OPTICAL FIBER

Ali Rostami, Ahmad Salmanogli

Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.

Progress In Electromagnetics Research B•Jan 1, 2008•15 citations

Energy Transfer Theory Between ER3+ Ion and Silicon Nanocrystal in Optical Cavity and Electric Field

Qing-Yi Guo

The need for higher bandwidth and people's desire to be "always connected" have spurred a new era of silicon photonics. The traditional integrated electrical transmission lines have been an obstacle preventing ultra high speed communication. Using monolithic chips of integrated optoelectronic circuits from silicon provides an economic way to realize Tetra Byte/Second bandwidth in a variety of areas such as "fiber to the home" and the buses linking chips inside computer. The heart of such optoelectronics-silicon laser-is still in pursuit. One of the most promising approaches is the erbium doped silicon nanocrystals embedded in silica system. External photon or hot electrons injection excites the silicon nanocrystals, which then transfer their energies to nearby erbium ions to emit light at 1.55 μm wavelength range. In this thesis, we investigate the effects of cavity and electric field on energy transfer from Si nanocrystals (Si-nc's) to Er ions, and simulate material gain in such systems. Our results show that microcavity can enhance the Forster energy transfer and material gain, reducing the requirements for Si-nc pumping. The electric field will hinder the radiation decay of Si-nc, but we have to further explore the tunneling mechanism before concluding the overall effect of electric field. Some future work needs to be done, which will shine some light on the design of the silicon laser.

•Oct 1, 2007•0 citations

Optical amplification in Er3+-doped transparent Ba2NaNb5O15 single crystal at 850 nm

Patricia Haro‐González, Inocencio Rafael Martin, F.J. Lahoz +3 more

Positive optical gain around 5 cm−1 (∼21 dB/cm) has been observed in Er3+-doped Ba2NaNb5O15 single crystal using a pump and probe experimental setup. High power laser pulses at 532 nm have been used as the pump source in order to strongly populate the S43/2(H211/2) levels of the Er3+ ions due to ground state absorption. Low signal beam cw laser radiation at 850 nm has been used as the probe beam to stimulate the emission associated with the S43/2(H211/2)→I413/2 electronic transition of the Er3+ ions. The process has been modelized as a four level system, and its population has been analyzed and simulated in order to study the gain dynamics. Optical amplification of the probe signal has been observed during the first 60 μs, which represents a good agreement between the measured lifetime of the S43/2(H211/2) levels and the reported simulation.

Journal of Applied Physics•Dec 1, 2009•8 citations

Achieving optical gain in waveguide-confined nanocluster-sensitized erbium by pulsed excitation

Gerald M. Miller, Ryan M. Briggs, Harry A. Atwater

We use a rate equation approach to model the conditions for optical gain in nanocluster sensitized erbium in a slot waveguide geometry. We determine the viability of achieving net gain for the range of reported values of the carrier absorption cross section for silicon nanoclusters. After accounting for the local density of optical states modification of the emission rates, we find that gain is impossible in continuous wave pumping due to carrier absorption, regardless of the carrier absorption cross section. We, therefore, propose a pulsed electrical operation scheme which mitigates carrier absorption by taking advantage of the short lifetime of silicon nanoclusters compared to erbium. We show that pulsed excitation of a 10 nm layer achieves a modal gain of 0.9 dB/cm during each pulse. Furthermore this gain can be increased to 2 dB/cm by pumping a 50 nm layer.

Journal of Applied Physics•Sep 15, 2010•22 citations

Time-resolved measurements of optical gain and photoluminescence in silicon nanocrystals

Kateřina Dohnalová, Kateřina Kůsová, Ondřej Cibulka +2 more

In this paper, we present time-resolved optical gain spectroscopy using a combination of the variable stripe length and the shifting excitation spot techniques under pulsed nanosecond excitation at 355 nm. Optical gain measurements in the temporal detection window of 10 ns width, coincident with the excitation pulse, revealed induced absorption losses, whereas measurements with a different detection gate width and delay in two main photoluminescence components (a fast band at ∼430 nm decaying in nanoseconds and a slow band at ∼620 nm decaying in microseconds) show a positive optical gain of the order of tens of cm -1 .

Physica Scripta•Nov 1, 2010•11 citations

Optical gain at the F-band of oxidized silicon nanocrystals

Kateřina Dohnalová, Karel Žídek, Lukáš Ondič +3 more

In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.

Journal of Physics D Applied Physics•Jun 10, 2009•35 citations
Net optical gain in silicon nanocrystals (Si-nc) has been measured by pump and probe transmission experiments. Si-nc active layers have been produced by plasma enhanced chemical vapor deposition on transparent quartz substrates. Continuous and pulsed pump and probe transmission measurements have shown clear evidences of net probe amplification with fast (nanosecond) response time. Transfer matrix and rate equations modeling of the nonlinear signal transmission allowed to extract the gain spectra for different pump intensities yielding good qualitative agreement with the experimental data. Gain cross sections per nanocrystals of the order of 3×10−16cm2 have been deduced. The physical origin of the optical amplification is interpreted within a four level recombination model describing the dynamics of strongly localized excitons at the Si-nc∕SiO2 interface.
Abstract—In this article the details of Erbium doped Fiber Amplifier (EDFA) in presence of Silicon nanocrystal (Si-Nc) is investigated. In this analysis Si-Nc and Er ions in matrix of fiber are assumed two and five levels respectively. For this structure rate equation for transient and steady state analysis is considered. The range of Er (+3) concentration and pump intensity at 488 nm are considered [10 17 − 10 21]1/cm 3 and [10 17 − 10 23] photon/cm 2 · sec respectively in this paper. Based on numerical simulation of this problem we observed that with increasing of concentration of the Si-Nc the fiber length for given optical gain is decreased. For example in the case of 40 dB optical gain, we calculated fiber length to be 1.1 × 10 5 cm without Si-Nc and 5 × 10 2 cm for σCCa = 1 × 10 −17 cm 2 (confined carrier absorption cross-section) and 5 cm for σCCa =1 × 10 −19 cm 2 respectively. Our simulations show that for second level with increasing pump intensity the population rise and fall times are decreased. But, for third level the population rise time is decreased and fall time is depends to level of Er ion interactions. We observed that with increasing Er ions optical net gain is increased and finally has a maximum. After this special value of Er ions because of increasing in interaction between ions the net gain finally begin to decrease. In this analysis we let to Er ions have inhomogeneous distribution. Also, we observed that in this case with increasing of the distribution peak, the net gain is increased, interaction between ions is increased, the coupling coefficient to the Si-Ncs is increased and losses due to Si-Ncs are decreased. Finally effect of Kexiton (maximum number of exciton in single Si-Nc) on amplification process is considered and we observed that in the case of Kexiton = 2 the optical gain considerably and introduced losses due to Si-Nc are increased. 28 Rostami and SalmanOgli 1.
The need for higher bandwidth and people's desire to be "always connected" have spurred a new era of silicon photonics. The traditional integrated electrical transmission lines have been an obstacle preventing ultra high speed communication. Using monolithic chips of integrated optoelectronic circuits from silicon provides an economic way to realize Tetra Byte/Second bandwidth in a variety of areas such as "fiber to the home" and the buses linking chips inside computer. The heart of such optoelectronics-silicon laser-is still in pursuit. One of the most promising approaches is the erbium doped silicon nanocrystals embedded in silica system. External photon or hot electrons injection excites the silicon nanocrystals, which then transfer their energies to nearby erbium ions to emit light at 1.55 μm wavelength range. In this thesis, we investigate the effects of cavity and electric field on energy transfer from Si nanocrystals (Si-nc's) to Er ions, and simulate material gain in such systems. Our results show that microcavity can enhance the Forster energy transfer and material gain, reducing the requirements for Si-nc pumping. The electric field will hinder the radiation decay of Si-nc, but we have to further explore the tunneling mechanism before concluding the overall effect of electric field. Some future work needs to be done, which will shine some light on the design of the silicon laser.
Positive optical gain around 5 cm−1 (∼21 dB/cm) has been observed in Er3+-doped Ba2NaNb5O15 single crystal using a pump and probe experimental setup. High power laser pulses at 532 nm have been used as the pump source in order to strongly populate the S43/2(H211/2) levels of the Er3+ ions due to ground state absorption. Low signal beam cw laser radiation at 850 nm has been used as the probe beam to stimulate the emission associated with the S43/2(H211/2)→I413/2 electronic transition of the Er3+ ions. The process has been modelized as a four level system, and its population has been analyzed and simulated in order to study the gain dynamics. Optical amplification of the probe signal has been observed during the first 60 μs, which represents a good agreement between the measured lifetime of the S43/2(H211/2) levels and the reported simulation.
We use a rate equation approach to model the conditions for optical gain in nanocluster sensitized erbium in a slot waveguide geometry. We determine the viability of achieving net gain for the range of reported values of the carrier absorption cross section for silicon nanoclusters. After accounting for the local density of optical states modification of the emission rates, we find that gain is impossible in continuous wave pumping due to carrier absorption, regardless of the carrier absorption cross section. We, therefore, propose a pulsed electrical operation scheme which mitigates carrier absorption by taking advantage of the short lifetime of silicon nanoclusters compared to erbium. We show that pulsed excitation of a 10 nm layer achieves a modal gain of 0.9 dB/cm during each pulse. Furthermore this gain can be increased to 2 dB/cm by pumping a 50 nm layer.
In this paper, we present time-resolved optical gain spectroscopy using a combination of the variable stripe length and the shifting excitation spot techniques under pulsed nanosecond excitation at 355 nm. Optical gain measurements in the temporal detection window of 10 ns width, coincident with the excitation pulse, revealed induced absorption losses, whereas measurements with a different detection gate width and delay in two main photoluminescence components (a fast band at ∼430 nm decaying in nanoseconds and a slow band at ∼620 nm decaying in microseconds) show a positive optical gain of the order of tens of cm -1 .
In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.