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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Light emission and propagation in Er-doped silicon-rich oxide layers

M. Forcales, A.R. Wilkinson, Nathanael J. Smith, R. G. Elliman

Published Jan 1, 2005• 0 citations
Publisher

Abstract

In this contribution, a detailed discussion on the sensitizing effect of silicon nanoclusters is explored as a means of minimizing induced absorption and increasing the number of optically active erbium ions as a plausible way for realizing an integrated optical amplifier.
DOI
10.1109/leos.2005.1548235

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We have fabricated a series of thin (~50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this material. Experimental findings in this work clearly evidence inadequacy of the commonly employed optimization procedure when optical amplification is considered. We reveal that the significantly lower erbium ion concentrations are to be used in order to fully exploit the potential of this approach and achieve net optical gain.
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We report a strong increase in the intensity of spontaneous emission from erbium ions embedded into an active layer of amorphous silicon oxide (a-SiO x ) in a planar microcavity based on a-Si:H/a-SiO x layers. Using eigenmodes of this microcavity both for excitation (pumping) and for the extraction of photoluminescence, it is possible to increase the spontaneous emission intensity from erbium ions by a factor of about 500 as compared to the photoluminescence from a single doped a-SiO x (Er) film.