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IEEE International Conference on Group IV Photonics (GFP)

Resonant coupling of erbium ions to optical modes in silicon photonic crystal cavities

M. Miritello, Roberto Lo Savio, Abdul Shakoor, Paolo Cardile, Karl Welna, Lucio Claudio Andreani, Dario Gerace, Thomas F. Krauss, Liam O’Faoláin, Francesco Priolo, Mattéo Galli

Published Aug 1, 2014• 0 citations
Publisher

Abstract

Light emission in crystalline silicon (c-Si) has been a subject of intense research over the past two decades. Many different strategies have been explored to make silicon an efficient infrared emitter at strategic telecom wavelengths, including doping with rare-earth atoms, or exploiting optically active structural defects.
DOI
10.1109/group4.2014.6962048

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Optical quantum memories will enable technologies including long distance quantum communication and modular quantum computing. Rare earth ion doped crystals provide an excellent solid state platform for optical quantum memories. Among rare earths, erbium is particularly appealing due to its long-lived telecom-wavelength resonance, allowing integration with silicon photonics and with existing optical communication technology and infrastructure. We present an on-chip all-optical quantum memory at telecom wavelengths using a nanobeam photonic crystal cavity fabricated directly in erbium-167 doped yttrium orthosilicate. Using an atomic frequency comb protocol, we store coherent pulses for memory times as long as 10 µs, albeit with low efficiency. For shorter memory times, we achieve a memory efficiency of 0.4%, which is limited by the coupling rate between the resonator and the ensemble of ions. By working at dilution refrigerator temperatures, we are able to access a regime where the ions have long optical coherence times and good spectral holeburning properties using only a moderate magnetic field applied with permanent magnets. We characterize the multimode properties and fidelity of the quantum memory in this device, and outline a path toward higher efficiency.