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Applied Physics B

Photoluminescence of Er 3+ ions in amorphous silicon layers under intensive laser excitation

Boris V. Kamenev, Vladimir I Emel'yanov, Константинова Елизавета Александровна, Pavel K. Kashkarov, Victor Yu. Timoshenko, C. Chao, V. Kh. Kudoyarova, E. I. Terukov

Published Feb 1, 2002• 5 citations
Publisher
DOI
10.1007/s003400100778

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The spectra and photoluminescence kinetics of Er 3+ ions embedded in amorphous fluorine- and chlorine-doped silica matrices synthesized by surface-plasma chemical vapor deposition were investigated at 27–300 K. Luminescence was excited with an Ar + laser at a wavelength of 514.5 nm and with a diode laser at a wavelength of 975 nm. Narrow and well-expressed components of Stark sublevels with a small contribution of inhomogeneous broadening intrinsic to Er 3+ ions in crystalline rather than amorphous matrices were revealed and identified in photoluminescence spectra. The structure of Stark sublevels was well-resolved at low temperatures. The presence of the well-resolved Stark structure in spectra was indicative of stable anion complex formation in Er 3+ environment presumably associated with halogen incorporation. This environment was formed at a stage of the low-temperature plasma-chemical synthesis and was destroyed at glass fusion.