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Physics of Wave Phenomena

Peculiarities of Er3+ photoluminescence in halogen-doped amorphous silica

Artem V. Kholodkov, GOLANT KONSTANTIN MIKHAJLOVICH, L. D. Iskhakova

Published Sep 1, 2009• 4 citations
Publisher

Abstract

The spectra and photoluminescence kinetics of Er 3+ ions embedded in amorphous fluorine- and chlorine-doped silica matrices synthesized by surface-plasma chemical vapor deposition were investigated at 27–300 K. Luminescence was excited with an Ar + laser at a wavelength of 514.5 nm and with a diode laser at a wavelength of 975 nm. Narrow and well-expressed components of Stark sublevels with a small contribution of inhomogeneous broadening intrinsic to Er 3+ ions in crystalline rather than amorphous matrices were revealed and identified in photoluminescence spectra. The structure of Stark sublevels was well-resolved at low temperatures. The presence of the well-resolved Stark structure in spectra was indicative of stable anion complex formation in Er 3+ environment presumably associated with halogen incorporation. This environment was formed at a stage of the low-temperature plasma-chemical synthesis and was destroyed at glass fusion.

DOI
10.3103/s1541308x09030017

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Abstract We observed for the first time to our knowledge the presence of replica holes in the fluorescencespectrum of EDFA. Saturating the Er 3+ transition at a single wavelength we noticed theappearance of spectral holes in the ASE other than the usual one around the saturating laser. Wequalitatively explain the effect and confront the experimental results with the homogeneouslybroadened model. Introduction One of the limiting factors to state-of-the-art DWDM systems is the effect of Spectral Hole Burning (SHB) inErbium Doped Fiber Amplifiers (EDFAs). It has been already observed that the presence of a saturating signal ina given wavelength induces a hole around the signal in the gain and Amplified Spontaneous Emission (ASE)spectra [1],[2]. These holes in EDFAs are typically between 2 and 8 nm width, which is enough to degrade theneighboring channels. The SHB effect is due to the inhomogeneous broadening of the Er 3+ transitions, causedby site-to-site variations of the local electric field in the silica based host, which induces different ions laser linesproperties.This work shows the existence of spectral holes burned at wavelengths far from the saturating laserline, called Spectral Replica Holes (SRHs). The physical background that explains SRHs is based on theinhomogeneously broadened two-level Stark Splitted

•Jan 1, 2003•1 citation
The spectra and photoluminescence kinetics of Er 3+ ions embedded in amorphous fluorine- and chlorine-doped silica matrices synthesized by surface-plasma chemical vapor deposition were investigated at 27–300 K. Luminescence was excited with an Ar + laser at a wavelength of 514.5 nm and with a diode laser at a wavelength of 975 nm. Narrow and well-expressed components of Stark sublevels with a small contribution of inhomogeneous broadening intrinsic to Er 3+ ions in crystalline rather than amorphous matrices were revealed and identified in photoluminescence spectra. The structure of Stark sublevels was well-resolved at low temperatures. The presence of the well-resolved Stark structure in spectra was indicative of stable anion complex formation in Er 3+ environment presumably associated with halogen incorporation. This environment was formed at a stage of the low-temperature plasma-chemical synthesis and was destroyed at glass fusion.
Experimental evidence of an efficient broadband sensitization mechanism in erbium-implanted alumina is presented. Alumina thin films were deposited by plasma-enhanced chemical vapor deposition using trimethyl-amine alane and nitrous oxide. The as-grown films, together with sapphire crystals, were implanted with erbium. Photoluminescence excitation spectra showed that erbium-implanted sapphire crystals exhibit characteristic Er3+ luminescence at 1.53μm only when pumped resonantly. In contrast, erbium-implanted alumina thin films exhibit 1.53μm luminescence even when pumped at wavelengths outside Er3+ absorption bands. We postulate that the sensitizing species is either small nanoclusters of aluminum or pairs of aluminum ions.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/P-doped and A1/P-doped silica preforms, and Al/P-doped and Ge-doped fibers were examined. At 77 K the homogeneous linewidths were found to be relatively insensitive to composition. In particular, they vary from 1.4 to 1.8 cm-1 for the different hosts using excitation at 1531 nm. At 300 K weak resonant features were observed in most samples, consistent with a small inhomogeneous contribution to a predominantly homogeneous fluorescence emission.
Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped Si-inverse opal photonic crystal. These photonic crystals can potentially have a photonic bandgap that can fully inhibit the spontaneous emission of on optical emitter. Fabrication criteria are derived for such a photonic crystal, based on the lattice parameter, filling fraction, and Si refractive index. In the opal photonic crystal composed of both Si and SiO2 we show that Er ions can be selectively excited in both the Si and SiO2 part of the photonic crystal by changing the excitation wavelength and/or the measurement temperature.
A study on the dynamics of gain spectral hole burning (GSHB) in a silica-based erbium-doped fiber amplifier at 77 K was performed. When a saturation signal was input into an Er3+-doped fiber, a multigain spectral hole structure that consisted of nine gain spectral holes, was observed in the wavelength region from 1510 to 1640 nm at 77 K. As for the Er3+ ion concentration dependence of these gain spectral holes, the depth of the gain spectral hole at around 1530 nm was found to become shallower in the silica-based erbium-doped fiber that had higher Er3+ ion content. This Er3+ ion concentration dependence of the gain spectral hole depth suggests that the contribution of the energy-transfer interaction between Er3+ ions excited to the Stark levels within the ^4 I_13/2 manifold plays an important role in the gain spectral hole formation at 77 K. As far as we know, this is the first report of the Er3+ ion concentration effect on the GSHB in the Er3+-doped fiber. The dynamics of GSHB is discussed in relation to the effect of energy transfer between Er3+ ions. In addition, the relation between gain spectral hole structure and the Stark energy structure of Er3+ ion is also discussed.
Sputter-deposited thin-film amorphous AlN:Er (1 at. %) emits at 554 and 561 nm as a result of (2)H(11/2)→(4)I(15/2) and (4)S(3/2)→(4)I(15/2) transitions. AlN:Yb (1 at. %) gives a weak emission peak at 966 nm as a result of (2)F(5/2)→(2)F(7/2). The codoping of Er and Yb in AlN results in energy transfer from Er(+3) to Yb(+3) and enhances the Yb(+3) emissions by an order of magnitude. Transfer of electrons occurs from the (4)S(3/2) state of Er(+3) to the (2)F(5/2) state of Yb(+3). The weak emission from Yb(+3), when excited by a 532 nm laser in the absence of Er(+3), confirms that the luminescence enhancement in ytterbium is due to energy transfer and not to direct green light excitation by the erbium emission. A possibility of population inversion and a four-level laser cavity formation exists in the Er(+3)-Yb(+3) system.
Abstract We observed for the first time to our knowledge the presence of replica holes in the fluorescencespectrum of EDFA. Saturating the Er 3+ transition at a single wavelength we noticed theappearance of spectral holes in the ASE other than the usual one around the saturating laser. Wequalitatively explain the effect and confront the experimental results with the homogeneouslybroadened model. Introduction One of the limiting factors to state-of-the-art DWDM systems is the effect of Spectral Hole Burning (SHB) inErbium Doped Fiber Amplifiers (EDFAs). It has been already observed that the presence of a saturating signal ina given wavelength induces a hole around the signal in the gain and Amplified Spontaneous Emission (ASE)spectra [1],[2]. These holes in EDFAs are typically between 2 and 8 nm width, which is enough to degrade theneighboring channels. The SHB effect is due to the inhomogeneous broadening of the Er 3+ transitions, causedby site-to-site variations of the local electric field in the silica based host, which induces different ions laser linesproperties.This work shows the existence of spectral holes burned at wavelengths far from the saturating laserline, called Spectral Replica Holes (SRHs). The physical background that explains SRHs is based on theinhomogeneously broadened two-level Stark Splitted