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Journal of Applied Physics

Rabi oscillations in a strongly driven semiconductor quantum well

Emmanuel Paspalakis, Margarita Tsaousidou, Andreas Terzis

Published Aug 15, 2006• 43 citations
Publisher

Abstract

We study the interaction of an ac electric field with a semiconductor quantum well by using the effective nonlinear Bloch equations. Only the first two electron subbands in the well are considered. We apply the rotating wave approximation and derive analytical solutions for the Bloch equations for two different values of the detuning. At exact resonance we find a critical value of the Rabi frequency around which the dynamics of the system changes abruptly. Above this critical value one obtains electron oscillations with complete inversion in the two-subband system, while below this value we obtain electron oscillations without complete inversion and with the majority of the electron population on average in the lower subband. We also present numerical calculations for a specific quantum well structure and assess the limits of validity of the analytical results.

DOI
10.1063/1.2227647

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We study the interaction of an ac electric field with a semiconductor quantum well by using the effective nonlinear Bloch equations. Only the first two electron subbands in the well are considered. We apply the rotating wave approximation and derive analytical solutions for the Bloch equations for two different values of the detuning. At exact resonance we find a critical value of the Rabi frequency around which the dynamics of the system changes abruptly. Above this critical value one obtains electron oscillations with complete inversion in the two-subband system, while below this value we obtain electron oscillations without complete inversion and with the majority of the electron population on average in the lower subband. We also present numerical calculations for a specific quantum well structure and assess the limits of validity of the analytical results.
We study coherent ultrashort pulse propagation in a two-subband system in a symmetric semiconductor quantum well structure, performing calculations beyond the rotating wave approximation and the slowly varying envelope approximation and taking into account the effects of electron-electron interactions. The interaction of the quantum well structure with the electromagnetic fields is studied with modified, nonlinear, Bloch equations. These equations are combined with the full-wave Maxwell equations for the study of pulse propagation. We present results for the pulse propagation and the population inversion dynamics in the quantum well structure for different electron sheet densities.
We study theoretically the Kerr nonlinearity of a probe field in the presence of a near resonant pump field in a two-subband system in a semiconductor quantum well structure. In our study we take into account the effects of electron–electron interactions and consider the interaction of the two-subband system with rectangular electromagnetic fields. For the description of the system dynamics we use the nonlinear differential equations of the density matrix elements for the several nonlinear optical processes, under the rotating wave approximation. These equations are solved numerically for a GaAs/AlGaAs quantum well structure. We show that the Kerr nonlinearity of a driven two-subband system can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.
We consider one-dimensional chains of two-level quantum systems coupled via tunneling. The chain is driven by the superposition of dc and ac fields in the strong coupling regime. Based on the fundamental principles of electrodynamics and quantum theory, we have developed a generalized model of quantum dynamics for such interactions, free of rotating-wave approximation. The system of equations of motion was studied numerically. We analyzed the dynamics and spectra of the inversion density, dipole current density, and tunneling current density. In the case of resonant interaction with the ac component, the particle dynamics exhibits itself in the oscillatory regime, which may be interpreted as a combination of Rabi and Bloch oscillations with their strong mutual influence. Such scenario for an obliquely incident ac field dramatically differs from the individual picture of both types of oscillations due to the interactions. This effect is counterintuitive because of the existence of markedly different frequency ranges for such two types of oscillations. These dynamics manifest themselves in multiline spectra in different combinations of Rabi and Bloch frequencies. The effect is promising as a framework of a new type of spectroscopy in nanoelectronics and electrical control of nanodevices.
We theoretically investigate the influence of dynamic Coulomb interaction on optical bistability and Rabi oscillations in a driven two-level semiconductor quantum dot system under laser irradiation. Using density matrix equations derived from the Coulomb-interaction model proposed by Lu et al. [Phys. Rev. A 103, 043504 (2021)], we obtain analytical solutions for population inversion under the rotating wave approximation. Our analysis shows that the Coulomb interaction induces optical bistability, governed by a cubic equation. The thresholds and the shapes of the hysteresis loops are tunable and can be controlled by various parameters, including electron density, confinement potential, detuning, and dephasing. Additionally, our numerical simulations demonstrate the potential for achieving high-efficiency population inversion and predicting bifurcation and anharmonic regimes in Rabi oscillations under monochromatic excitation.